Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
208 words
A process for forming deposited film, which comprises: (a) the step of preparing a substrate having crystal nuclei or regions where crystal nuclei are selectively formed scatteringly on the surface for forming deposited film in a film forming space for formation of deposited film; (b) the step of forming deposited film on the above substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation (B) which is chemically mutually reactive on said activated species (A) separately from each other into said film-forming space to effect chemical reaction therebetween; (c) the step of introducing a gaseous substance (E) having etching action on the deposited film to be formed or a gaseous substance (E 2 ) forming said gaseous substance (E) into said film-forming space during said film-forming step (b) and exposing the deposited film growth surface to said gaseous substance (E) to apply etching action thereon, thereby effecting preferentially crystal growth in a specific face direction; (d) irradiating said gaseous substance (E) with light energy during said step (C), and (e) the step of increasing etching activity of said gaseous substance (E) by irradiation of light energy
Claim 2
Dependent Claim
208 words
A process for forming deposited film, which comprises: (a) the step of preparing a substrate having crystal nuclei or regions where crystal nuclei are selectively formed scatteringly on the surface for forming deposited film in a film forming space for formation of deposited film; (b) the step of forming deposited film on the above substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation (B) which is chemically mutually reactive on said activated species (A) separately from each other into said film-forming space to effect chemical reaction therebetween; (c) the step of introducing a gaseous substance (E) having etching action on the deposited film to be formed or a gaseous substance (E 2 ) forming said gaseous substance (E) into said film-forming space during said film-forming step (b) and exposing the deposited film growth surface to said gaseous substance (E) to apply etching action thereon, thereby effecting preferentially crystal growth in a specific face direction; (d) irradiating said gaseous substance (E) with light energy during said step (C), and (e) the step of increasing etching activity of said gaseous substance (E) by irradiation of light energy
Claim 3
Dependent Claim
49 words
A process for forming deposited film according to Claim 1, wherein said compound (SX) is a chain halogenated silicon represented by the formula Si u Y 2u+2 (wherein u is an integer of 1 or more, Y is at least one element selected from F, Cl, Br and I).
Claim 4
Dependent Claim
66 words
A process for forming deposited film according to Claim 1, wherein said compound (SX) is a chain or cyclic halogenated silicon represented by the formula-Si u H x Yy (wherein u, x, y are integers of 1 or more, x + y = 2u or x + y = 2u + 2, and Y is at least one element selected from F, Cl, Br and I).
Claim 5
Dependent Claim
31 words
A process for forming deposited film according to Claim 1, wherein either one of hydrogen and halogen is used in addition to said compound (SX) during decomposition of said compound (SX).
Claim 6
Dependent Claim
27 words
A process for forming deposited film according to Claim 1, wherein said chemical substance (B) for film formation is either one of hydrogen gas and halogen gas.
Claim 7
Dependent Claim
39 words
A process for forming deposited film according to Claim 1, wherein the flow rate ratio of said active species (A) and said active species (B) when introduced into the film-forming space is 10 : 1 to 1 : 10.
Claim 8
Dependent Claim
35 words
A process for forming deposited film according to Claim 1, wherein a compound containing an impurity element as the component is permitted to coexist with said compound (SX) during formation of said activated species (A).
Claim 9
Dependent Claim
39 words
A process for forming deposited film according to Claim 1, wherein a compound containing an impurity element as the component is permitted to coexist with said chemical substance (B) for film formation during formation of said activated species (B).
Claim 10
Dependent Claim
32 words
A process for forming deposited film according to Claim 1, wherein an activated species (D) formed from a compound containing an impurity element as the component is introduced into said film-forming space.