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EP0242626B1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method for mounting electronic components on a substrate

Assignee: Siemens AG
•
Filing: 1987-03-25
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Granted: 1991-06-12
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Expires: 2007-03-25
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Abstract

No abstract record available.

Inventors

  • 👤 Herbert Dr. Schwarzbauer

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 23:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/30; H10W72/01; H10W72/013; H10W72/01365; H10W72/071; H10W72/073; H10W72/07311; H10W72/07331; H10W72/07336; H10W72/321; H10W72/325; H10W72/351; H10W72/352; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/054

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 93 words
Method for mounting electronic components, in particular large-area power semiconductors, on a substrate by pressure sintering, in which a. a paste (P) consisting of metal powder and a solvent is applied in a layer onto the contacting layer (KS) of the component (B) and/or the contacting surface (KO) of the substrate (S), b. the applied paste (P) is then dried, c. the component (B) is placed on the substrate (S) and d. the entire arrangement is then heated to sintering temperature with simultaneous application of a mechanical pressure of at least 900 N/cm².
Claim 2
Dependent Claim 26 words
Method according to Claim 1, characterised in that the powder of a noble metal or of a noble metal alloy is used as the metal powder.
Claim 3
Dependent Claim 23 words
Method according to Claim 2, characterised in that silver powder or the powder of a silver alloy is used as the metal powder.
Claim 4
Dependent Claim 24 words
Method according to one of the preceding claims, characterised in that when pressure sintering a mechanical pressure of at least 1000 N/cm² is exerted.
Claim 5
Dependent Claim 25 words
Method according to one of Claims 1 to 3, characterised in that when pressure sintering a mechanical pressure of at least 1500 N/cm² is exerted.
Claim 6
Dependent Claim 34 words
Method according to one of Claims 1 to 3, characterised in that when pressure sintering a mechanical pressure is exerted which corresponds at least to the given operating pressure of a pressure-contacted component (B).
Claim 7
Dependent Claim 43 words
Method according to one of the preceding claims, characterised in that before the pressure sintering the component (B) and the substrate (S) are heated in a pressure-free fashion to a temperature which is below the sintering temperature and which is at least 100°C.
Claim 8
Dependent Claim 36 words
Method according to Claim 7, characterised in that the component (B) and the substrate (S) are heated in a pressure-free fashion to a temperature which corresponds approximately to the given operating temperature of a component (B).
Claim 9
Dependent Claim 24 words
Method according to one of the preceding claims, characterised in that the pressure sintering is performed at a sintering temperature of at least 150°C.
Claim 10
Dependent Claim 25 words
Method according to one of Claims 1 to 8, characterised in that the pressure sintering is performed at a sintering temperature between 180°C and 250°C.
Claim 11
Dependent Claim 24 words
Method according to one of the preceding claims, characterised in that the pressure sintering is performed in a press with heated punches (St1, St2).
Claim 12
Dependent Claim 27 words
Method according to one of the preceding claims, characterised in that when pressure sintering the top of the component is protected by a deformable intermediate layer (Z1).
Claim 13
Dependent Claim 35 words
Method according to Claim 12, characterised in that when pressure sintering a second intermediate layer (Z2) consisting of a hard material with a low coefficient of heat expansion is arranged over the intermediate layer (Z1).
Claim 14
Dependent Claim 19 words
Method according to one of the preceding claims, characterised in that after pressure sintering a pressure-free resintering is performed.
Claim 15
Dependent Claim 36 words
Method according to Claim 14, characterised in that sintering times in the region of one minute are selected for the pressure sintering and sintering times in the region of several minutes are selected for the resintering.

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