Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
207 words
A process for forming a deposited film comprising the steps of: (a) preparing a substrate for deposited film formation by selectively irradiating the surface of a base member with an energy beam of an electromagnetic wave or electron beam through atmosphere of a reactive gas or a gas having etching action to provide regions where crystal nuclei are selectively formed scatteringly on the surface; (b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into a film forming space in which said substrate is previously arranged to effect chemical reaction therebetween; and (c) introducing into said film forming space during the film forming step (b) a gaseous substance (E) having etching action on the deposited film to be formed or a gaseous substance (E2) capable of forming the gaseous substance (E) and exposing the deposited film growth surface to the gaseous substance (E) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.
Claim 2
Dependent Claim
207 words
A process for forming a deposited film comprising the steps of: (a) preparing a substrate for deposited film formation by selectively irradiating the surface of a base member with an energy beam of an electromagnetic wave or electron beam through atmosphere of a reactive gas or a gas having etching action to provide regions where crystal nuclei are selectively formed scatteringly on the surface; (b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into a film forming space in which said substrate is previously arranged to effect chemical reaction therebetween; and (c) introducing into said film forming space during the film forming step (b) a gaseous substance (E) having etching action on the deposited film to be formed or a gaseous substance (E2) capable of forming the gaseous substance (E) and exposing the deposited film growth surface to the gaseous substance (E) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.
Claim 3
Dependent Claim
49 words
A process for forming deposited film according to Claim 1, wherein said compound (SX) is a chain halogenated silicon represented by the formula Si u Y 2u+2 (wherein u is an integer of 1 or more, Y is at least one element selected from F, Cl, Br and I).
Claim 4
Dependent Claim
68 words
A process for forming deposited film according to Claim 1, wherein said compound (SX) is a chain or cyclic halogenated silicon represented by the formula Si u H x y y (wherein u, x, y are integers of 1 or more, x + y = 2u or x + y = 2u + 2, and Y is at least one element selected from F, Cl, Br and I).
Claim 5
Dependent Claim
31 words
A process for forming deposited film according to Claim 1, wherein either one of hydrogen and halogen is used in addition to said compound (SX) during decomposition of said compound (SX).
Claim 6
Dependent Claim
27 words
A process for forming deposited film according to Claim 1, wherein said chemical substance (B) for film formation is either one of hydrogen gas and halogen gas.
Claim 7
Dependent Claim
39 words
A process for forming deposited film according to Claim 1, wherein the flow rate ratio of said active species (A) and said active species (B) when introduced into the film-forming space is 10 : 1 to 1 : 10.
Claim 8
Dependent Claim
35 words
A process for forming deposited film according to Claim 1, wherein a compound containing an impurity element as the component is permitted to coexist with said compound (SX) during formation of said activated species (A).
Claim 9
Dependent Claim
39 words
A process for forming deposited film according to Claim 1, wherein a compound containing an impurity element as the component is permitted to coexist with said chemical substance (B) for film formation during formation of said activated species (B).
Claim 10
Dependent Claim
32 words
A process for forming deposited film according to Claim 1, wherein an activated species (D) formed from a compound containing an impurity element as the component is introduced into said film-forming space.