Patent EP0241991A2 successfully refreshed from Google Patents.
EP0241991A2
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EP
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Field effect transistor having a membrane overlying the gate insulator
Assignee: Sentron Vof
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Filing: 1987-04-06
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Granted: —
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Expires: 2007-04-06
Abstract
Abstract A field effect transistor is provided that includes a membrane overlying its gate insulator. The field effect transistor has separated semiconductor drain and source regions of a polarity opposite to that of the substrate. An electrically insulating layer overlies the gate region between the source and drain region to thereby function as a gate insulator. A membrane overlies the electrically insulating layer, and an electrical contact electrically connects the field effect transistor in a circuit.
Inventors
- 👤 Joannes Peter Gerardus Maria Schreurs
- 👤 Auke Gerardus Talma
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 20:38
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
116 words
An improved field effect transistor comprising a semiconductor substrate with separated drain and source regions of polarity opposite to that of said substrate provided therein by diffusion; an electrically insulating layer overlying the gate region between said source and drain regions; a membrane overlying said electrically insulating layer, said membrane being selectively sensitive to a chemical component; and electrical circuit contact means for connecting the field effect transistor in an electrical circuit, wherein the improvement comprises: an electrolyte phase present as an intermediate layer between said electrically insulating layer and said membrane, and said electrolyte is of a composition to ensure a thermodynamically determined chemical equilibrium at each of the boundary planes of said electrolyte phase.
Claim 2
Dependent Claim
116 words
An improved field effect transistor comprising a semiconductor substrate with separated drain and source regions of polarity opposite to that of said substrate provided therein by diffusion; an electrically insulating layer overlying the gate region between said source and drain regions; a membrane overlying said electrically insulating layer, said membrane being selectively sensitive to a chemical component; and electrical circuit contact means for connecting the field effect transistor in an electrical circuit, wherein the improvement comprises: an electrolyte phase present as an intermediate layer between said electrically insulating layer and said membrane, and said electrolyte is of a composition to ensure a thermodynamically determined chemical equilibrium at each of the boundary planes of said electrolyte phase.
Claim 3
Dependent Claim
44 words
The field effect transistor according to claim 1, wherein said electrolyte phase contains a buffer solution with a pH that is equal to or less than about 4 and a substantially constant amount of the chemical component to which said membrane is selectively sensitive.
Claim 4
Dependent Claim
54 words
The field effect transistor according claim 1, wherein said electrolyte phase contains, in addition to said substantially constant amount of the chemical component to which said membrane is selectively sensitive, a substantially constant amount of halogen ions in combination with a metal/metal-halogen-compound layer overlying said gate insulator, said metal-halogen-compound having a low solubility product.
Claim 5
Dependent Claim
16 words
The field effect transistor according to claim 3, wherein said metal/metal-halogen-compound layer is an AG/AgCl layer.
Claim 6
Dependent Claim
16 words
The field effect transistor according to claim 3, wherein said metal/metal-halogen-compound layer is an Ag/AgI layer.
Claim 7
Dependent Claim
16 words
The field effect transistor according to claim 3, wherein said metal/metal-halogen-compound layer is an Hg/Hg₂Cl₂ layer.
Claim 8
Dependent Claim
118 words
An improved field effect transistor comprising a semiconductor substrate with separate drain and source regions of a polarity opposite to that of said substrate provided therein by diffusion; an electrically insulating layer overlying the gate region between said source and drain regions; a membrane overlying said electrically insulating layer, said membrane being substantially not selectively sensitive to a chemical component; and electrical contact means for connecting the field effect transistor in an electrical circuit, wherein the improvement comprises: an electrolyte phase present as an intermediate layer between said electrically insulating layer and said membrane, and said electrolyte is of a composition to ensure a thermodynamically determined chemical equilibrium at each of the boundary planes of said electrolyte phase.
Claim 9
Dependent Claim
118 words
An improved field effect transistor comprising a semiconductor substrate with separate drain and source regions of a polarity opposite to that of said substrate provided therein by diffusion; an electrically insulating layer overlying the gate region between said source and drain regions; a membrane overlying said electrically insulating layer, said membrane being substantially not selectively sensitive to a chemical component; and electrical contact means for connecting the field effect transistor in an electrical circuit, wherein the improvement comprises: an electrolyte phase present as an intermediate layer between said electrically insulating layer and said membrane, and said electrolyte is of a composition to ensure a thermodynamically determined chemical equilibrium at each of the boundary planes of said electrolyte phase.
Claim 10
Dependent Claim
28 words
The field effect transistor according to claim 7, wherein said electrolyte phase contains a buffer solution with a pH that is equal to or less than about 4.
Claim 11
Dependent Claim
36 words
The field effect transistor according to claim 7, wherein said electrolyte phase contains a substantial amount of halogen ions in combination with a metal/metal-halogen-compound layer overlying said gate insulator, said metal-halogen-compound having a low solubility product.
Claim 12
Dependent Claim
16 words
The field effect transistor according to claim 9, wherein said metal/metal-halogen-compound layer is an Ag/AgCl layer.
Claim 13
Dependent Claim
16 words
The field effect transistor according to claim 9, wherein said metal/metal-halogen-compound layer is an Ag/AgI layer.
Claim 14
Dependent Claim
16 words
The field effect transistor according to claim 9, wherein said metal/metal-halogen-compound layer is an Hg/Hg₂Cl₂ layer.
References Cited (Backward Citations)
No citation records indexed.
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