Patent EP0239368A2 successfully refreshed from Google Patents.
EP0239368A2
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EP
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Field-effect transistor
Assignee: Toshiba Corp
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Filing: 1987-03-24
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Granted: —
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Expires: 2007-03-24
Abstract
Abstract A field-effect transistor comprising a semiconductor substrate (11) having source and drain regions (12, 13) and a gate electrode (19), wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate (11) and the gate electrode (19). When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate (11).
Inventors
- 👤 Nobuhiro C/O Patent Division Gemma
- 👤 Koichi C/O Patent Division Mizushima
- 👤 Akira C/O Patent Division Miura
- 👤 Makoto C/O Patent Division Azuma
- 👤 Toshio C/O Patent Division Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 12:48
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
45 words
A field-effect transistor comprising a semiconductor substrate (11) having a source region (12) and a drain region (13), and a gate electrode (19), wherein a thin organic film including donor and acceptor molecules is provided between said semiconductor substrate (11) and said gate electrode (19).
Claim 2
Dependent Claim
45 words
A field-effect transistor comprising a semiconductor substrate (11) having a source region (12) and a drain region (13), and a gate electrode (19), wherein a thin organic film including donor and acceptor molecules is provided between said semiconductor substrate (11) and said gate electrode (19).
Claim 3
Dependent Claim
36 words
A transistor according to claim 1, characterized in that said thin organic film consists of a stacking structure of a first thin film (16) including donor molecules and a second thin film (17) including acceptor molecules.
Claim 4
Dependent Claim
28 words
A transistor according to claim 1, characterized in that said thin organic film consists of a single thin film (20) including both of the donor and acceptor molecules.
Claim 5
Dependent Claim
50 words
A transistor according to claim 1, characterized in that said thin organic film consists of a super lattice structure obtained by stacking repeatedly a plurality of stacking structures of the first thin film (16a, 16b, 16c) including donor molecules and the second thin film (17a, 17b, 17c) including acceptor molecules.
Claim 6
Dependent Claim
46 words
A transistor according to claim 1, characterized in that said thin organic film consists of a stacking structure of a first thin film (16) including a plurality of types of donor molecules and a second thin film (17) including a plurality of types of acceptor molecules.
Claim 7
Dependent Claim
58 words
A transistor according to claim 1, characterized in that said thin organic film consists of a structure obtained by sequentially stacking a first thin film (16) including donor molecules (17a), a second thin film (17b) including acceptor molecules, and a third thin film including other acceptor molecules having an electronic affinity larger than that of said acceptor molecules.
Claim 8
Dependent Claim
69 words
A transistor according to claim 1, characterized in that said thin organic film consists of a structure obtained by sequentially stacking a first thin film (16a) including donor molecules, a second thin film (17) including acceptor molecules, and a third thin film (16b) interposed between the first and second thin films (16a, 17) and including other donor molecules having an ionization potential larger than that of said donor molecules.
Claim 9
Dependent Claim
32 words
A transistor according to claim 1, characterized in that a thin film (15, 18) including insulating organic molecules is formed on at least one of the surfaces of said thin organic film.
Claim 10
Dependent Claim
26 words
A transistor according to claim 1, characterized in that said thin organic film is formed on said semiconductor substrate (11) through an inorganic insulating film (14).
Claim 11
Dependent Claim
22 words
A transistor according to claim 8, characterized in that said thin organic film (15) is formed directly on said semiconductor substrate (11).
Claim 12
Dependent Claim
51 words
A transistor according to claim 1, characterized in that said thin organic film consists of a structure obtained by stacking a first thin film including donor molecules, a second thin film including acceptor molecules, and a third thin film interposed between the first and second thin films and including insulating molecules.
Claim 13
Dependent Claim
24 words
A transistor according to claim 1, characterized in that said thin organic film includes organic molecules having a donor radical and an acceptor radical.
Claim 14
Dependent Claim
19 words
A transistor according to claim 1, characterized in that said thin organic film is formed by the Langmuir-Blodgett process.
References Cited (Backward Citations)
No citation records indexed.
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