Patent EP0237826A2 successfully refreshed from Google Patents.
EP0237826A2
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EP
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Method of making a self-aligned metallic contact
Assignee: Siemens AG
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Filing: 1987-02-19
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Granted: —
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Expires: 2007-02-19
Abstract
Abstract Translated from German Verfahren zur selbstjustierten Herstellung eines z.B. als Gatekontakt dienenden Kontaktes (81) mit einer Abmessung von z.B. 0,3 bis 0,1 µm, wobei Fotolithographie mit lediglich Lichtstrahlung durchzuführen ist. Trotz der geringen Abmessung läßt sich hier ein (Gate-)Kontakt mit sehr geringem Zuleitungswiderstand herstellen. Process for the self-adjusted manufacture of e.g. contact (81) serving as gate contact with a dimension of e.g. 0.3 to 0.1 µm, with photolithography using only light radiation. Despite the small dimensions, a (gate) contact can be made with a very low lead resistance.
Inventors
- 👤 Josef Dr. Willer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 09:10
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0614; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; Y; Y10; Y10S; Y10S148/00; Y10S148/10; Y10S148/139
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