Patent EP0234547A2 successfully refreshed from Google Patents.
EP0234547A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing photomask and photo-mask manufactured thereby
Assignee: Sharp Corp
•
Filing: 1987-02-24
•
Granted: —
•
Expires: 2007-02-24
Abstract
Abstract A method of manufacturing a photo-mask, which includes the steps of applying a resist film (3) onto a substrate (1) of quartz, glass and the like, subjecting the resist film (3) to light exposure and development to form a fine resist pattern (4), etching the mask substrate (1) covered by the fine resist pattern (4) so as to cause a non-light transmitting thin film (2) of Cr, Ta, etc. to adhere thereon by vapor deposition, sputtering and the like, and removing the thin film (2) on the resist pattern (4) together with the resist film (3), thereby to form the photo-mask. The disclosure is also directed to a photo-mask manufactured by the above method.
Inventors
- 👤 Junji Hirokane
- 👤 Hiroyuki Katayama
- 👤 Akira Takahashi
- 👤 Tetsuya Inui
- 👤 Kenji Ohta
- 👤 Junichi Washo
- 👤 Tomoyuki Miyake
- 👤 Kazuo Van
- 👤 Michinobu Mieda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 12:42
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/54; G03F1/68; G11; G11B; G11B7/00; G11B7/24; G11B7/26; G11B7/261; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
58 words
A photo-mask which comprises a substrate (1) of quartz, glass, etc., and an opaque metal layer (2) such as Ta, Cr and the like filled in a groove means formed by removing part of said substrate (1), with the surface of said metal layer (2) being formed to be generally flush with the surface of said substrate (1).
Claim 2
Dependent Claim
58 words
A photo-mask which comprises a substrate (1) of quartz, glass, etc., and an opaque metal layer (2) such as Ta, Cr and the like filled in a groove means formed by removing part of said substrate (1), with the surface of said metal layer (2) being formed to be generally flush with the surface of said substrate (1).
Claim 3
Independent Claim
101 words
A method of manufacturing a photo-mask, which comprises the steps of applying a resist film (3) onto a substrate (1) of quartz, glass and the like, subjecting the resist film (3) to light exposure and development to form a fine resist pattern (4), etching the mask substrate (1) covered by said fine resist pattern (4) so as to cause a non-light transmitting thin film (2) of Cr, Ta, etc. to adhere thereon by vapor deposition, sputtering and the like, and removing said thin film (2) on the resist pattern (4) together with said resist film (3), thereby to form said photo-mask.
Claim 4
Independent Claim
101 words
A method of manufacturing a photo-mask, which comprises the steps of applying a resist film (3) onto a substrate (1) of quartz, glass and the like, subjecting the resist film (3) to light exposure and development to form a fine resist pattern (4), etching the mask substrate (1) covered by said fine resist pattern (4) so as to cause a non-light transmitting thin film (2) of Cr, Ta, etc. to adhere thereon by vapor deposition, sputtering and the like, and removing said thin film (2) on the resist pattern (4) together with said resist film (3), thereby to form said photo-mask.
Claim 5
Independent Claim
136 words
A method of manufacturing a photo-mask, which comprises the steps of causing a light-transmitting thin film (6) of Si₃N₄, etc. to adhere onto a mask substrate (1) of quartz, glass, etc. by vapor deposition, sputtering, etc., applying a resist film (3) thereonto, subjecting the resist film (3) to light exposure and development to form a fine resist pattern (4), further subjecting said thin film (6) to isotropic etching in a state as covered by said resist pattern (4) so as to form a groove means in a portion not covered by said resist pattern (4), further applying thereon a light-shielding thin film (2) of Cr, Ta and the like by vapor deposition, sputtering, etc., and removing said light-shielding thin film (2) adhering to the portion of the resist pattern (4) together with said resist film (3).
Claim 6
Independent Claim
136 words
A method of manufacturing a photo-mask, which comprises the steps of causing a light-transmitting thin film (6) of Si₃N₄, etc. to adhere onto a mask substrate (1) of quartz, glass, etc. by vapor deposition, sputtering, etc., applying a resist film (3) thereonto, subjecting the resist film (3) to light exposure and development to form a fine resist pattern (4), further subjecting said thin film (6) to isotropic etching in a state as covered by said resist pattern (4) so as to form a groove means in a portion not covered by said resist pattern (4), further applying thereon a light-shielding thin film (2) of Cr, Ta and the like by vapor deposition, sputtering, etc., and removing said light-shielding thin film (2) adhering to the portion of the resist pattern (4) together with said resist film (3).
Claim 7
Independent Claim
123 words
A method of manufacturing a photo-mask, which comprises the steps of applying a resist film (3) onto a mask substrate (1) of quartz, glass and the like, subjecting the resist film (3) to light exposure and development to form a fine resist pattern (4), isotropically etching the mask substrate (1) covered by said fine resist pattern (4) after anisotropic etching thereof so as to form a groove means in a portion not covered by said resist pattern (4) and to cause a light-shielding thin film (2) of Cr, Ta, etc. to adhere thereonto by vapor deposition, sputtering and the like, and removing said light-shielding thin film (2) on the resist pattern (4) together with said resist film (3), thereby to form said photo-mask.
Claim 8
Independent Claim
123 words
A method of manufacturing a photo-mask, which comprises the steps of applying a resist film (3) onto a mask substrate (1) of quartz, glass and the like, subjecting the resist film (3) to light exposure and development to form a fine resist pattern (4), isotropically etching the mask substrate (1) covered by said fine resist pattern (4) after anisotropic etching thereof so as to form a groove means in a portion not covered by said resist pattern (4) and to cause a light-shielding thin film (2) of Cr, Ta, etc. to adhere thereonto by vapor deposition, sputtering and the like, and removing said light-shielding thin film (2) on the resist pattern (4) together with said resist film (3), thereby to form said photo-mask.
Claim 9
Independent Claim
140 words
A method of manufacturing a photo-mask, which comprises the steps of: applying onto a mask substrate (1), a first thin film (6B) having a nature in which isotropic etching proceeds in a dry etching process, further applying a resist film (3) thereonto, further subjecting said resist film (3) to light exposure and development to form a fine resist pattern (4), further subjecting the mask substrate (1) covered by said resist pattern (4) to dry etching so as to form grooves (g) in portions not covered by said resist pattern, further applying a second thin film (2B) of non-light transmitting nature thereonto, subsequently removing said second thin film (2B) adhering to the resist pattern (4) together with said resist film (3), and finally removing said thin film (6B) or removing said first thin film (6B) integrally with said resist film (3).
Claim 10
Independent Claim
140 words
A method of manufacturing a photo-mask, which comprises the steps of: applying onto a mask substrate (1), a first thin film (6B) having a nature in which isotropic etching proceeds in a dry etching process, further applying a resist film (3) thereonto, further subjecting said resist film (3) to light exposure and development to form a fine resist pattern (4), further subjecting the mask substrate (1) covered by said resist pattern (4) to dry etching so as to form grooves (g) in portions not covered by said resist pattern, further applying a second thin film (2B) of non-light transmitting nature thereonto, subsequently removing said second thin film (2B) adhering to the resist pattern (4) together with said resist film (3), and finally removing said thin film (6B) or removing said first thin film (6B) integrally with said resist film (3).
Claim 11
Independent Claim
149 words
A method of manufacturing a photo-mask, which comprises the steps of: (i) forming a resist layer (4C) on a light-transmitting mask substrate (1), (ii) forming a desired pattern on said resist layer (4C) by light exposure and development, (iii) forming grooves (g) of a desired pattern on the light-transmitting mask substrate (1) by anisotropic etching, (iv) removing the resist layer (4C′) on said light-transmitting mask substrate (1), (v) forming a light-shielding material (2C) on said light-transmitting mask substrate (1) formed with said grooves (g), (vi) further forming a height-supplementing layer (H) on said light-shielding material layer (2C) so as to make the surface to be generally of a uniform height, and (vii) removing said height-supplementing layer (H) and said light-shielding material layer (2C) by a predetermined thickness so as to cause the surface of said mask substrate (1) other than the portions of said grooves (g) to be exposed.
Claim 12
Independent Claim
149 words
A method of manufacturing a photo-mask, which comprises the steps of: (i) forming a resist layer (4C) on a light-transmitting mask substrate (1), (ii) forming a desired pattern on said resist layer (4C) by light exposure and development, (iii) forming grooves (g) of a desired pattern on the light-transmitting mask substrate (1) by anisotropic etching, (iv) removing the resist layer (4C′) on said light-transmitting mask substrate (1), (v) forming a light-shielding material (2C) on said light-transmitting mask substrate (1) formed with said grooves (g), (vi) further forming a height-supplementing layer (H) on said light-shielding material layer (2C) so as to make the surface to be generally of a uniform height, and (vii) removing said height-supplementing layer (H) and said light-shielding material layer (2C) by a predetermined thickness so as to cause the surface of said mask substrate (1) other than the portions of said grooves (g) to be exposed.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.