High contrast low metal ion photoresist developing method and composition

Claim 1

A process for developing a positive radiation sensitive resist film comprised of quinone diazide sulfonic acid derivatives and alkali soluble resin that has been coated on a substrate and exposed to radiation to form a surface relief pattern which comprises: (a) contacting the exposed film with a solution comprising an organic base aqueous solution adjusted to a concentration that does not give development of the photoresist and containing a cationic surfactant from about 0.0001 to about 1.0% and more preferably from about 0.001 to about 0.75% and most preferably 0.01 to 0.25% by weight of the total solution. (b) subjecting said film to an aqueous rinse, and (c) contacting the said film with an organic aqueous base developer solution having a p H of at least 9 and containing from about 0.0001 to 5% and more preferably from about 0.001 to about 2% based on the weight of developer of a fluorocarbon surfactant having the formula: where Y is a a radical selected from the group -CH 2 CH 2 0-, -SO 2 NR-, -SO 3 -, -SO 2 N(R )CH 2 CO 2 -, -CO 2 - and -CO-NR I- wherein R f is either a straight or branched chain of the formula C p F 2p+1 where p is an integer of from 3-17 and wherein R is hydrogen or an acyl or alkyl radical of 1 to 30 carbon atoms and m is an integer of 2 to 26 and preferably where m is an integer of 5-2,6, and R is hydrogen or an alkyl radical of 1-6 carbon atoms until the exposed portions of the film are dissolved.