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Patent EP0229707A2 successfully refreshed from Google Patents.
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EP0229707A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method for forming deposited film

Assignee: Canon Inc
•
Filing: 1987-01-12
•
Granted: —
•
Expires: 2007-01-12
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Abstract

Abstract A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.

Inventors

  • 👤 Shunichi Ishihara
  • 👤 Masaaki Hirooka
  • 👤 Jun-Ichi Hanna
  • 👤 Isamu Shimizu

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 21:50
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/02; C23C16/44; C23C16/448; C23C16/452

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 129 words
A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate, which comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.
Claim 2
Independent Claim 129 words
A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate, which comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.
Claim 3
Dependent Claim 28 words
The method according to claim 1, wherein each layer of the multi-layer structure film has a film thickness in the range of from 10 Å to 200 Å.
Claim 4
Dependent Claim 38 words
The method according to claim 1, wherein relative to the amount (a) of the subjective starting material gas (A) as introduced, the amount (b) of the objective starting material gas (B) as introduced is made 1/2 or less.
Claim 5
Dependent Claim 19 words
The method according to claim 1, wherein a silicon compound is used as the subjective starting material gas (A).
Claim 6
Dependent Claim 19 words
The method according to claim 1, wherein a germanium compound is used as the objective starting material gas (B).
Claim 7
Dependent Claim 19 words
The method according to claim 1, wherein a carbon compound is used as the objective starting material gas (B).
Claim 8
Dependent Claim 11 words
A multi-layer structure film obtained by the method of claim 1.

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