Patent EP0229397A2 successfully refreshed from Google Patents.
EP0229397A2
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EP
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Photoelectric conversion device and method for manufacturing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-12-30
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Granted: —
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Expires: 2006-12-30
Abstract
Abstract A photoelectric conversion device is caused to have a quick response against incident light by designing the photosensitive portion in such a way that photocurrent does flow only in the direction perpendicular to a semiconductor layer. The device is comprised of the semiconductor and a pair of electrodes which are formed on the opposed surfaces of the semiconductor layer. The semiconductor layer is etched together with the electrodes so that the layer and the electrodes have the same area and the same shape.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 03:18
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F10/00; H10F10/10; H10F10/17; H10F39/80; H10F39/805; H10F39/8057
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
79 words
A photoelectric conversion device comprising: a transparent substrate; photosensitive semiconductor layer provided on said substrate with its electrode arrangemnt; and a resin layer provided adjacent to said semiconductor layer on said substrate and in contact with the periphery of said semiconductor layer, the contact between said resin layer and the periphery of said resin layer being proximate by using said semiconductor layer as a mask to etch said resin layer, whereby substantially no parasitic channel resides on said contact.
Claim 2
Dependent Claim
79 words
A photoelectric conversion device comprising: a transparent substrate; photosensitive semiconductor layer provided on said substrate with its electrode arrangemnt; and a resin layer provided adjacent to said semiconductor layer on said substrate and in contact with the periphery of said semiconductor layer, the contact between said resin layer and the periphery of said resin layer being proximate by using said semiconductor layer as a mask to etch said resin layer, whereby substantially no parasitic channel resides on said contact.
Claim 3
Dependent Claim
49 words
An image sensor comprising: a substrate; and a photosensitive semiconductor array arranged on said substrate, each element of said array being composed of a semiconductor layer and a pair of electrodes which is formed on the opposed surfaces of said semiconductor layer and which covers said opposed surfaces prefectly.
Claim 4
Dependent Claim
49 words
An image sensor comprising: a substrate; and a photosensitive semiconductor array arranged on said substrate, each element of said array being composed of a semiconductor layer and a pair of electrodes which is formed on the opposed surfaces of said semiconductor layer and which covers said opposed surfaces prefectly.
Claim 5
Dependent Claim
19 words
A sensor of claim 2 wherein said first and second electrodes and said semiconductor layer coincident with each other.
Claim 6
Dependent Claim
22 words
A sensor of claim 2 further comprising a plurality of signal extracting lines which are in contact with said first electrodes respectively.
Claim 7
Dependent Claim
19 words
A sensor of claim 2 further comprising a resin layer disposed between each adjacent ones of said array elements.
Claim 8
Dependent Claim
22 words
A sensor of claim 5 wherein the upper surface of said resin layer is not higher than that of said semiconductor layer.
Claim 9
Dependent Claim
15 words
A sensor of claim 5 wherein said resin layer is flush with said semiconductor layer.
Claim 10
Independent Claim
93 words
A method for manufacturing an image sensor composed of a plurality of sensor elements, said method comprising: a step of preparing a substrate; a step of forming a first electrode on said substrate; a step of forming a photoelectric semiconductor layer on said first electrode; a step of forming a second electrode on said semiconductor layer; and a step of removing said first and second electrodes and said semiconductor layer at once with a plurality of masks on said second electrode which are located in the positions corresponding to the sensor elements respectively.
Claim 11
Independent Claim
93 words
A method for manufacturing an image sensor composed of a plurality of sensor elements, said method comprising: a step of preparing a substrate; a step of forming a first electrode on said substrate; a step of forming a photoelectric semiconductor layer on said first electrode; a step of forming a second electrode on said semiconductor layer; and a step of removing said first and second electrodes and said semiconductor layer at once with a plurality of masks on said second electrode which are located in the positions corresponding to the sensor elements respectively.
Claim 12
Dependent Claim
23 words
A method of claim 8 further comprising a step of forming a plurality of conductive lines for extracting the outputs of said elements.
Claim 13
Dependent Claim
17 words
A method of claim 8 further comprising a step of disposing a resin layer between said elements.
Claim 14
Dependent Claim
10 words
A method of claim 10 wherein said substrate is transparent.
Claim 15
Dependent Claim
22 words
A method of claim 11 wherein said resin layer is formed from a negative photoresist by photoetching with said elements as masks.
Claim 16
Dependent Claim
23 words
A method of claim 12 wherein the etching condition is so chosen that the remaining resin layer is flush with said semiconductor layer.
Claim 17
Dependent Claim
34 words
A device of claim 1 wherein said electrode arrangement comprises a first electrode provided on one surface of said semiconductor layer and a second electrode provided on the other surface of said semiconductor layer.
Claim 18
Dependent Claim
31 words
A device of claim 14 wherein said first electrode is made transparent to provide an access for incident light to said photoelectric semiconductor layer, while said second electrode is made opaque.
Claim 19
Independent Claim
25 words
A device of claiml4 wherein said first and/or second electrode is made transparent to provide an access for incident light to said photoelectric semiconductor layer.
Claim 20
Dependent Claim
19 words
A device of claim 14 the contacts between the semiconductor layer and the first and second electrodes are ohmic.
Claim 21
Dependent Claim
16 words
A device of claim 17 wherein said semiconductor layer incorporates n-i-n, p-i-n, or m-i junction therein.
References Cited (Backward Citations)
No citation records indexed.
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