Patent EP0228183A2 successfully refreshed from Google Patents.
EP0228183A2
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EP
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Method for manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1986-11-21
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Granted: —
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Expires: 2006-11-21
Abstract
Abstract This invention provides a method for manufacturing a semiconductor device having a semiconductor substrate (21) comprising the steps of diffusing an impurity into the substrate (21) to form diffusion region (25, 26) in the substrate (21), depositing an insulation layer (27) on the semiconductor substrate (21), etching a contact hole (28) through the insulation layer (27) for exposing a portion of the diffusion region (25, 26), filling the contact hole (28) with a semiconductive layer (29a), depositing a conductive layer (30) over the entire substrate for connection to the semiconductive layer (29a), and selectively etching the conductive layer (30) to form a lead.
Inventors
- 👤 Tatsuo Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 08:47
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D84/00; H10D84/80; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; H10W20/062
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
104 words
A method for manufacturing a semiconductor device having a semiconductor substrate (21) comprising the steps of: diffusing an impurity into the substrate (21) to form a diffusion region (25,26) in the substrate (21); depositing an insulation layer (27) on the semiconductor substrate (21); and etching a contact hole (28) through the insulation layer (27) for exposing a portion of the diffusion region (25,26); characterized in that filling the contact hole (28) with a semiconductive layer (29a); \ depositing a conductive layer (30) over the entire substrate for connection to the semiconductive layer (29a); and selectively etching the conductive layer (30) to form a lead.
Claim 2
Independent Claim
104 words
A method for manufacturing a semiconductor device having a semiconductor substrate (21) comprising the steps of: diffusing an impurity into the substrate (21) to form a diffusion region (25,26) in the substrate (21); depositing an insulation layer (27) on the semiconductor substrate (21); and etching a contact hole (28) through the insulation layer (27) for exposing a portion of the diffusion region (25,26); characterized in that filling the contact hole (28) with a semiconductive layer (29a); \ depositing a conductive layer (30) over the entire substrate for connection to the semiconductive layer (29a); and selectively etching the conductive layer (30) to form a lead.
Claim 3
Dependent Claim
69 words
A method for manufacturing a semiconductor device according to claim 1 wherein the step of filling includes the steps of: depositing a metallic layer (29) including silicon over the entire substrate; heating the substrate for concentrating the silicon on the surface of the diffusion region (25,26) in the contact hole (28); and selectively removing the metallic layer (29b) to leave the semiconductive layer (29a) inside the contact hole (28).
Claim 4
Dependent Claim
30 words
A method for manufacturing a semiconductor device according to claim 2 wherein the step of heating includes the step of raising the temperature to about 400 C to 600 C.
Claim 5
Dependent Claim
33 words
A method for manufacturing a semiconductor device according to claim 2 wherein the step of heating also includes the step of maintaining the temperature at about 450°C for about 30 to 60 minutes.
Claim 6
Dependent Claim
80 words
A method for manufacturing a semiconductor device according to claim 1 wherein the step of filling includes the steps of: depositing a metallic layer (41) on the entire surface of the substrate; depositing a silicon layer (42) on the metallic layer; heating the substrate for concentrating the silicon on the surface of the diffusion region (25,26) in the contact hole (28); and selectively removing the metallic and silicon layers to leave the semiconductive layer (29a) inside the contact hole (28).
Claim 7
Dependent Claim
28 words
A method for manufacturing a semiconductor device according to claim 5 wherein the step of heating includes the step of raising the temperature to about 400°C to 600°C.
Claim 8
Dependent Claim
41 words
A method for manufacturing a semiconductor device according to claim 2 wherein the step of depositing a metallic layer (29) includes the step of simultaneously depositing a metal and silicon in an amount above the solid solubility limit of the metal.
Claim 9
Dependent Claim
52 words
A method for manufacturing a semiconductor device according to claim 1 wherein the step of filling includes the steps of: selecting a material from the group consisting of aluminum, platinum, tungsten, titanium, cobalt, and tantalum; depositing the material in the contact hole; and diffusing silicon into the material in the contact hole.
References Cited (Backward Citations)
No citation records indexed.
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