Patent EP0227303A2 successfully refreshed from Google Patents.
EP0227303A2
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Method of manufacturing semiconductor devices having side-wall isolation
Assignee: Plessey Overseas Ltd
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Filing: 1986-11-20
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Granted: —
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Expires: 2006-11-20
Abstract
Abstract A method (Figure 7) in which a silicon or polysilicon feature (l) and overlayer of deposited dielectric (5) is protected by a covering layer (9) of nitride, a layer of polysilicon is deposited and is treated to define a sidewall fillet (l5) of oxide. It is preferred to carry out this last step by first etching back the polysilicon material (ll) and then oxidising the remaining fillet (l3) to form this sidewall oxide (l5).
Inventors
- 👤 Peter Gerard Kenny
- 👤 Peter Charles Hunt
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 18:11
CPC Classifications
H; H10; H10P; H10P95/00; H10P76/00; H10P76/40; H10P76/408; H10P76/4085
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
99 words
A method of semicondcutor device manufacture (figures 4-8) comprising the following steps:- providing a silicon substrate (3) and forming thereon a feature (l) of either silicon or polysilicon material, this feature (l) being topped by a layer of dielectric (5); applying to this feature (l), and to the exposed surface of the silicon substrate, a covering layer of nitride (9); applying to this covering layer (9), a layer (ll) of polysilicon material; forming an oxide sidewall (l5) by a combination of thermal oxidation and anisotropic etching of the polysilicon material (ll); and, removing the exposed layer (9) of nitride.
Claim 2
Independent Claim
99 words
A method of semicondcutor device manufacture (figures 4-8) comprising the following steps:- providing a silicon substrate (3) and forming thereon a feature (l) of either silicon or polysilicon material, this feature (l) being topped by a layer of dielectric (5); applying to this feature (l), and to the exposed surface of the silicon substrate, a covering layer of nitride (9); applying to this covering layer (9), a layer (ll) of polysilicon material; forming an oxide sidewall (l5) by a combination of thermal oxidation and anisotropic etching of the polysilicon material (ll); and, removing the exposed layer (9) of nitride.
Claim 3
Independent Claim
28 words
A method, as claimed in claim l, wherein in the step of forming the sidewall oxide (l5), the polysilicon material (ll) is etched prior to the thermal oxidation.
Claim 4
Independent Claim
20 words
A method, as claimed in either claims l or 2, wherein the thermal oxidation is performed at a high pressure.
Claim 5
Independent Claim
40 words
A method, as claimed in any one of the preceding claims, wherein a thin pad oxide layer is grown at the exposed surfaces of the feature (l) and substrate (3) prior to application of the covering layer of nitride (9).
References Cited (Backward Citations)
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