EP0221593A1
Expired / Lapsed
EP
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Method of manufacturing a semiconductor device using an implantation mask
Assignee: Koninklijke Philips NV
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Filing: 1986-10-08
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Granted: —
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Expires: 2006-10-08
Abstract
Abstract A method of manufacturing a semiconductor device having at least one narrow and comparatively deep groove (3) in the semiconductor surface, while zones (9) are implanted in the walls and/or the bottom of the groove over only part of the groove length. According to the invention, the implantation mask is provided on a filler material (6), which fills the groove and is removed after the masking layer (7) has been provided. The filler material preferably consists of a photo-resist.
Inventors
- 👤 Hermanus Leonardus Peek
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 22:35
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/222; H10P76/00; H10P76/40; H10P76/408; H10P76/4085
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
157 words
A method of manufacturing a semiconductor device, in which at least one groove is etched into a surface of a semiconductor substrate region and at least one zone of a semiconductor circuit element is formed in a part of the groove by ion implantation through a mask, characterized in that the groove is filled up to the surface with a soluble filler material, in that then over the entire surface there is provided a masking layer, which at the area of the groove is located on the filler material, in that subsequently at least above the groove and over only part of the length of the groove at least one opening is provided in the masking layer for forming an implantation mask, in that then through this opening the filler material is removed from the groove by dissolving, and in that then through the said opening the implantation is carried out, whereupon the implantation mask is removed.
Claim 2
Independent Claim
157 words
A method of manufacturing a semiconductor device, in which at least one groove is etched into a surface of a semiconductor substrate region and at least one zone of a semiconductor circuit element is formed in a part of the groove by ion implantation through a mask, characterized in that the groove is filled up to the surface with a soluble filler material, in that then over the entire surface there is provided a masking layer, which at the area of the groove is located on the filler material, in that subsequently at least above the groove and over only part of the length of the groove at least one opening is provided in the masking layer for forming an implantation mask, in that then through this opening the filler material is removed from the groove by dissolving, and in that then through the said opening the implantation is carried out, whereupon the implantation mask is removed.
Claim 3
Dependent Claim
17 words
A method as claimed in Claim 1, characterized in that the filler material used is a photoresist.
Claim 4
Dependent Claim
20 words
A method as claimed in Claim 1 or 2, characterized in that the masking layer used is a metal layer.
Claim 5
Dependent Claim
17 words
A method as claimed in Claim 3, characterized in that a masking layer of aluminium is used.
Claim 6
Independent Claim
44 words
A method as claimed in any one of the preceding Claims, characterized in that the surface of the substrate region is provided with an isolating layer, which extends as far as the walls of the groove and on which the masking layer is provided.
Claim 7
Dependent Claim
25 words
A method as claimed in Claim 5, characterized in that the implantation in a direction tranverse to the groove is masked by said isolating layer.
Claim 8
Independent Claim
27 words
A method as claimed in any one of the preceding Claims, characterized in that the width of the groove is at most equal to half its depth.
Claim 9
Independent Claim
30 words
A method as claimed in any one of the preceding Claims, characterized in that the implantation takes place in a groove having a depth of at least 3 / um.
Claim 10
Independent Claim
48 words
A method as claimed in any one of the preceding Claims, characterized in that the implantation takes place at an angle of less than 90° to the surface, as a result of which the implantation is effected at least in part in the side wall of the groove.
Claim 11
Independent Claim
34 words
A method as claimed in any one of the preceding Claims, characterized in that the groove wall and the groove bottom are covered with a thin oxide layer, through which the implantation takes place.
Claim 12
Independent Claim
35 words
A method as claimed in any one of the preceding Claims, characterized in that the grooves are filled with silicon, which is separated by an isolating layer from the groove walls and the groove bottom.
References Cited (Backward Citations)
EP0068074A2
Cited
US4466178A
Cited
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