Patent US197310A successfully refreshed from Google Patents.
Patent EP0221531A2 successfully refreshed from Google Patents.
EP0221531A2
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EP
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High heat conductive insulated substrate and method of manufacturing the same
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1986-11-04
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Granted: —
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Expires: 2006-11-04
Abstract
Abstract A high heat conductive insulated substrate comprising a substrate of which heat conductivity is not less than 50 W/mok, and a high heat conductive insulating layer coated on the substrate; and a method of producing a high heat conductive insulated substrate characterized in that an insulating layer is formed on a substrate by applying DC voltage and RF power to the substrate and providing magnetic field parallel to the surface of the substrate. The insulated substrate of the present invention has good heat conductivity, thermal resistance and smooth surface, whereby exfoliation of the film can be prevented.
Inventors
- 👤 Kenji Yamamoto
- 👤 Takehisa Nakayama
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 20:47
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/698; H10W40/00; H10W40/20; H10W40/25; H10W40/254; H10W70/68; H10W70/6875; H10W99/00; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/05; H05K1/053; Y; Y10; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265; Y10T428/30; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
31 words
I. A high heat conductive insulated substrate comprising a substrate of which heat conductivity is not less than 50 W/m.k, and a high heat conductive insulating layer coated on the substrate.
Claim 2
Dependent Claim
12 words
The insulated substrate of Claim I, wherein the substrate comprises crystalline silicon.
Claim 3
Dependent Claim
15 words
The insulated substrate of Claim I, wherein the substrate comprises nitrated or oxidized crystalline silicon.
Claim 4
Dependent Claim
11 words
The insulated substrate of Claim I, wherein the substrate comprises metal.
Claim 5
Dependent Claim
26 words
The insulated substrate of Claim 4, wherein the metal is Cu, Cu arroy, At, At arroy, W, W arroy, Zn, Zn arroy, Ni or stainless steel.
Claim 6
Dependent Claim
44 words
The insulated substrate of any one of Claims 4 to 5, wherein the insulating layer comprises hard carbon containing 0.01 to 20 atm % of elements of group IVA and deposited on the metal substrate by means of a method using plasma or ion.
Claim 7
Dependent Claim
32 words
The insulated substrate of Claim I, wherein the insulating layer comprises a multilayer film wherein a layer of dianomd and/or diamond-like carbon and a layer of silicon carbide are accumulated in turn.
Claim 8
Dependent Claim
37 words
The insulated substrate of Claim I, wherein an interlayer comprising metal or amorphous material having small coefficient of thermal expansion is provided at least on a part of the substrate, and thereon the insulating layer is formed.
Claim 9
Dependent Claim
44 words
The insulated substrate of any one of Claims 1, 2, 3 and 8, wherein the insulating layer comprises one or more material selected from the group consisting of diamond, dianond-like carbon, silicon carbide, amorphous silicon carbide, cubic boron nitride, hexagonal boron nitride, aluminum nitride.
Claim 10
Dependent Claim
33 words
The insulated substrate of Claim I, wherein the insulating layer comprises a material which mainly comprises at least one of silicon, Ge and carbon and might contain hydrogen or element of halogen group.
Claim 11
Dependent Claim
33 words
II. The insulated substrate of any one of Claims of 7 and 9, wherein the diamond-like carbon contains not more than 9 atm % of at least one of silicon and germanium atom.
Claim 12
Dependent Claim
32 words
The insulated substrate of any one of Claims 7 and 9, wherein the amorphous silicon carbide and diamond-like carbon contain at least one element of hydrogen atom and elements of halogen group.
Claim 13
Dependent Claim
31 words
The insulated substrate of any one of Claims I, 2, 3, 7 and 9, wherein a thickness of the layer of diamond and/or diamond-like carbon is 10 A to 2000 A.
Claim 14
Dependent Claim
40 words
The insulated substrate of any one of Claims I, 2, 3, 7 and 9, wherein a thickness of the layer of silicon carbide is 10 Å to 1000 Å and not less than two layers of silicon carbide are formed.
Claim 15
Dependent Claim
36 words
The insulated substrate of any one of Claims I, 2, 3, 7 and 9, wherein the insulating layer has an electrical resistivity of not less than 10 8 Ω.cm and a thermal resistance of 20 V/µm.
Claim 16
Dependent Claim
27 words
The insulated substrate of any one of Claims I, 2, 3, 7 and 9, wherein heat conductivity of the insulated substrate is not less than 50 W/m.k.
Claim 17
Dependent Claim
24 words
The insulated substrate of any one of Claims I, 2 and,9, wherein heat conductivity of the insulated substrate is not less than 100 W/m·k.
Claim 18
Dependent Claim
28 words
The insulated substrate of any one of Claims I, 2, 3, 6, 7 and 8, wherein surface Vickers hardness of the insulated substrate is not less than 500.
Claim 19
Dependent Claim
28 words
The insulated substrate of any one of Claims I, 2, 3, 6, 7 and 8, wherein surface Vickers hardness of the insulated substrate is not less than 1500.
Claim 20
Dependent Claim
35 words
The insulated substrate of any one of Claims I to 3, wherein dielectric constant and dielectric loss at I MHz of the insulated substrate are not more than 20 and not more than 0.02, respectively.
Claim 21
Dependent Claim
32 words
The insulated substrate of Claim 3, wherein the nitrated or oxidized crystalline silicon substrate is obtained by making through holes in a crystalline silicon substrate and thereafter nitrating or oxidizing the substrate.
Claim 22
Dependent Claim
32 words
The insulated substrate of Claim 3, wherein the nitration or oxidization takes place in the crystalline silicon substrate at least to a depth of 0.1 µm from a surface of the substrate.
Claim 23
Dependent Claim
32 words
The insulated substrate of Claim 3, wherein the nitration or oxidization takes place in the crystalline silicon substrate at least to a depth of 0.5 u.m from a surface of the substrate.
Claim 24
Dependent Claim
18 words
The insulated substrate of Claim 3, wherein a thickness of the insulating layer is 0.5 to 10 µm.
Claim 25
Dependent Claim
18 words
The insulated substrate of Claim 3, wherein a thickness of the insulated layer is I to 10 µm.
Claim 26
Dependent Claim
32 words
The insulated substrate of any one of Claims I, 2, 3, 7 and 9, wherein electrical conductivity of the insulating layer is not more than 10 -6 Ω -1 cm -1 .
Claim 27
Dependent Claim
28 words
The insulated substrate of Claim 6, wherein the element of group IV A is at least one element selected from the group consisting of Si, Ge and Sn.
Claim 28
Dependent Claim
46 words
The insulated substrate of any one of Claims 6 and 22, wherein a thickness of the hard carbon film is 10 to 5000 A and a carbon film which do not substantially contain an element of group IV A is formed on the hard carbon film.
Claim 29
Dependent Claim
16 words
The insulated substrate of Claim 6, wherein the hard carbon film comprises diamond or diamond-like carbon.
Claim 30
Dependent Claim
31 words
The insulated substrate of Claim 7, wherein heat conductivity of the substrate is not less than 50 W/m.k and heat conductivity of the insulated substrate is not less than 45 W/m·k.
Claim 31
Dependent Claim
36 words
The insulated substrate of any one of Claims I and 7, wherein electrical resistivity and dielectric breakedown voltage of the insulating layer are not less than 10 12 Ω.cm and not less than 100 V/µm respectively.
Claim 32
Dependent Claim
17 words
The insulated substrate of Claim 6, wherein the silicon carbide is single crystalline, polycrystalline, microcrystalline or amorphous.
Claim 33
Dependent Claim
63 words
The insulated substrate of Claim 8, wherein the interlayer comprises amorphous silicon compound containing at least one of a-Si, a-Six C l-x , a-Six N l-x , a-Si x+y C l-x N l-y , a-Si x+y C l-x O,.y, a-Six Ge,. x and a-Si x ..y C l-x Ge l-y (wherein x and y satisfy the relationships of 0.00I≦x≦I and 0.00l≦x + y≦l).
Claim 34
Dependent Claim
71 words
The insulated substrate of Claim 33, wherein the amorphous silicon compound contains (A) at least one of a-Si, a-Si x C l-x , a-Six Ntx, a-Si x+ y C l-x N,.y, a-Si x+y C l-x O l-y , a-Six Ge l-x and a-Si x+y C l-x Ge l-y (wherein x and y satisfy the relationships of 0.00l1≦x≦l and 0.00l≦x+y≦l), and (B) at least one of hydrogen and elements of halogen group.
Claim 35
Dependent Claim
18 words
The insulated substrate of Claim 8, wherein a thickness of the interlayer is 100 A to 5 u.m.
Claim 36
Dependent Claim
19 words
The insulated substrate of Claim 8, wherein a thickness of the insulating layer is 1000 A to 200 µm.
Claim 37
Independent Claim
42 words
A method of producing a high heat conductive insulated substrate characterized in that an insulating layer is formed on a substrate by applying DC voltage and RF power to the substrate and providing magnetic field parallel to a surface of the substrate.
Claim 38
Dependent Claim
72 words
In a method of producing a high heat conductive insulated substrate in which at least a part of crystalline silicon, nitrated or oxidized silicon substrate is coated with a high heat conductive insulating layer; the improvement wherein the crystalline silicon, nitrated or oxidized substrate is set on the side of RF closing electrode, RF power is applied to the electrode, and magnetic field is provided parallel to a surface of the substrate.
References Cited (Backward Citations)
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