Patent EP0218117A2 successfully refreshed from Google Patents.
EP0218117A2
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Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology
Assignee: Honeywell International Inc
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Filing: 1986-09-11
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Granted: —
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Expires: 2006-09-11
Abstract
Abstract An improved method is presented for the deposition of dielectric films in the fabrication of integrated circuits (ICs), wherein a solution of polymers derived from cyclosilazanes is employed to deposit dielectric films on semiconductor substrates by the spin-on technique. These spin-on films planarize (smooth out) underlying substrate topography and therefore are especially advantageous in multilevel metallization processes where they allow a highly uniform and continuous deposition of a subsequent layer of metallization resulting in improved yield and reliability of ICs.
Inventors
- 👤 Louis Gene C/O Allied Corp. Anello
- 👤 Satish Kumar C/O Allied Corp. Gupta
- 👤 Stephen Wakefield C/O Allied Corp. Kirtley
- 👤 Ralph Louis C/O Allied Corp. Deprenda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 09:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/65; H10P14/6516; H10P14/6529; H10P14/69; H10P14/6903; H10P14/692; H10P14/6921; H10P14/69215; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
85 words
In a process for forming dielectric films on substrates wherein a solution of a polymeric material is deposited onto a substrate and the substrate is rotated at a high speed whereby a uniform film of polymeric material is formed on the substrate, the improvement which comprises employing as the polymeric material a cyclosilazane having the formula (R₁R₂SiNH) n , wherein R₁ and R₂ are hydrogen or aliphatic groups of l-l2 carbon atoms or aryl groups of 6-l5 carbon atoms and n is 3 or 4.
Claim 2
Dependent Claim
85 words
In a process for forming dielectric films on substrates wherein a solution of a polymeric material is deposited onto a substrate and the substrate is rotated at a high speed whereby a uniform film of polymeric material is formed on the substrate, the improvement which comprises employing as the polymeric material a cyclosilazane having the formula (R₁R₂SiNH) n , wherein R₁ and R₂ are hydrogen or aliphatic groups of l-l2 carbon atoms or aryl groups of 6-l5 carbon atoms and n is 3 or 4.
Claim 3
Independent Claim
26 words
The method of claim l wherein the polymeric material is deposited as a solution in a solvent selected from benzene, toluene, zylene, methyl-isobutyl ketone, and cyclopentanone.
Claim 4
Dependent Claim
28 words
The method of claim 2 wherein the polymer is produced from cyclosilazane monomers wherein R₁ and R₂ are selected from hydrogen, methyl, ethyl, cyclohexyl, phenyl, or p-tolulyl radical.
Claim 5
Independent Claim
13 words
The method of claim l wherein R₁ and R₂ are both methyl groups.
Claim 6
Independent Claim
13 words
The method of claim l wherein R₁ and R₂ are both phenyl groups.
Claim 7
Independent Claim
15 words
The method of claim l wherein the polymer is a copolymer of hexamethylcyclotrisilazane and hexaphenylcyclotrisilazane.
Claim 8
Independent Claim
15 words
The method of claim l wherein R₁ is methyl and R₂ is a phenyl group.
Claim 9
Independent Claim
19 words
The method of claim l wherein the polymer is a copolymer of the dimethylsilyl derivative of ethylenediamine and trimethyltriphenylcyclosilazane.
Claim 10
Independent Claim
19 words
The method of claim l wherein the polymer is a copolymer of the dimethylsilyl derivative of ethylenediamine and hexaphenyltricyclosilazane.
Claim 11
Dependent Claim
27 words
l0. The method of claim l wherein the polymer is derived from silylamine monomers produced by the reaction of ammonia with a mixture of dimethyldichlorosilane and diphenyldichlorosilane.
Claim 12
Independent Claim
20 words
The method of claim l wherein the concentration of the polymer is between about l% (weight/weight) and about 50% (weight/weight).
Claim 13
Independent Claim
34 words
The method of claim l wherein (a) the said deposited film is heated at a temperature of 400°C to 450°C until the said film is further polymerized to a glassy, infusible, and insoluble state.
Claim 14
Independent Claim
33 words
The method of claim l7 wherein the glassy, infusible and insoluble film is further heated at temperatures of about 900°C in an oxygen or steam ambient to obtain a SiO₂ (silicon dioxide) film.
References Cited (Backward Citations)
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