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EP0214508A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Integrated semiconducteur memory

Assignee: Siemens AG
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Filing: 1986-08-18
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Granted: —
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Expires: 2006-08-18
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Abstract

Abstract Translated from German Ein Halbleiterspeicher ist in mehrere gleiche Zellenfelder ZF aufgeteilt Zum Testen können die Zellenfelder ZF parallel beschrieben und ausgelesen werden. Dazu erfaßt eine in den Speicher integrierte Auswerteschaltung AS die ausgelesenen Daten. Erkennt die Auswerteschaltung AS einen Fehler, so versetzt sie den Datenausgang in einen hochohmigen Zustand. A semiconductor memory is divided into several identical cell fields ZF. For testing, the cell fields ZF can be written to and read out in parallel. For this purpose, an evaluation circuit AS integrated in the memory detects the read data. If the evaluation circuit AS detects an error, it puts the data output in a high-resistance state.

Inventors

  • 👤 Hans Peter Dipl.-Phys. Fuchs

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 19:04
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/18; G11C29/30; G11C29/34; G11C29/44

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