Field effect transistor

Abstract

Abstract A field effect transistor includes a semiconductor substrate (ll), first and second semiconductor layers (l2, 4l) formed on the semiconductor substrate, and third semiconductor layers (2l, 22, 23) located between the first and second semiconductor layers. The third semicon­ductor layers (2l, 22, 23) have a forbidden band with narrower than those in the first and second semiconductor layers and form a quantum well. The third semiconductor layers include a doping layer (22) such as planar-doping or high doping, and a channel is formed in the third semi­conductor layers along the quatrum well. The electrons supplied from the doped layer are confined by the quantum well and form a quasi-two-dimensional electron gas.

Inventors

• 👤 Kohki Hikosaka
• 👤 Yasutake Hirachi

Bibliographic Details