Patent EP0213919A2 successfully refreshed from Google Patents.
EP0213919A2
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EP
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Semiconductor devices and method of manufacturing same by ion implantation
Assignee: Toshiba Corp
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Filing: 1986-08-26
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Granted: —
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Expires: 2006-08-26
Abstract
Abstract A method of manufacturing semiconductor devices by ion implantation, comprising the steps of, i) implanting P ions and ions selected from Si or Group II elements to the same region of GaAs or AlGaAs material, ii) performing a heat treatment to said ion implanted region for activation. Also disclosed are semiconductor devices manufactured according to this method.
Inventors
- 👤 Kouhei C/O Patent Division Morizuka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 13:22
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10D; H10D10/00; H10D10/80; H10D10/821; H10P30/218; H10P95/00; H10P95/90; H10P95/904
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
49 words
A method of manufacturing semiconductor devices by ion implantation, comprising the steps of: i) implanting P ions and ions selected from Si or Group II elements to the same region of a GaAs or AlGaAs material; and ii) performing a heat treatment of said ion implanted region for activation.
Claim 2
Independent Claim
49 words
A method of manufacturing semiconductor devices by ion implantation, comprising the steps of: i) implanting P ions and ions selected from Si or Group II elements to the same region of a GaAs or AlGaAs material; and ii) performing a heat treatment of said ion implanted region for activation.
Claim 3
Dependent Claim
26 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1, wherein P and Be or Mg are implanted for forming a p-type region.
Claim 4
Dependent Claim
24 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1, wherein P and Si are implanted for forming an n-type region.
Claim 5
Dependent Claim
37 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1, wherein the implanted amount of ions selected from Si or Group II elements is more than about 1 x 10 14 atoms/cm 2 .
Claim 6
Dependent Claim
42 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1, wherein the peak concentration of implanted ions selected from Si or Group II elements in said step i) is more than about 1 x 10 19 atoms/cm 3 .
Claim 7
Dependent Claim
41 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1, wherein the ratio of the implanted amount of atoms for P ions to the ions selected from Si or Group II elements is between about 1:10 and 10:1.
Claim 8
Dependent Claim
41 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1, wherein the ratio of the implanted amount of atoms for P ions to the ions selected from Si or Group II elements is between about 1:2 and 2:1.
Claim 9
Dependent Claim
34 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1, further comprising the step of depositing an insulating film on the GaAs or AlGaAs material before said heat treatment is performed.
Claim 10
Dependent Claim
28 words
A method of manufacturing semiconductor devices by ion implantation according to claim 8, wherein said insulating film is selected from SiO 2 , PSG, SiN, SiON and A1N.
Claim 11
Dependent Claim
31 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1. wherein said ion implantation is performed for a region comprising an external base region of a bipolar transistor.
Claim 12
Dependent Claim
26 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1. wherein said implantation is performed to source and drain regions of a MESFET.
Claim 13
Dependent Claim
27 words
A method of manufacturing semiconductor devices by ion implantation according to claim 11, wherein said ion implantation regions are formed as self-aligned regions to a gate electrode.
Claim 14
Independent Claim
92 words
A method of manufacturing semiconductor devices by ion implantation, comprising the steps of: i) forming a structure consisting essentially of an n-type GaAs collector layer, a p-type GaAs base layer and an n-type AlGaAs emitter stacked upon each other in the recited order: ii) implanting P ions and ions selected from Group II elements to a predetermined region extending in depth from said n-type AlGaAs emitter layer to said n-type GaAs collector layer, to form an external base reqion: and iii) performing a heat treatment of said ion implanted region for activation.
Claim 15
Independent Claim
92 words
A method of manufacturing semiconductor devices by ion implantation, comprising the steps of: i) forming a structure consisting essentially of an n-type GaAs collector layer, a p-type GaAs base layer and an n-type AlGaAs emitter stacked upon each other in the recited order: ii) implanting P ions and ions selected from Group II elements to a predetermined region extending in depth from said n-type AlGaAs emitter layer to said n-type GaAs collector layer, to form an external base reqion: and iii) performing a heat treatment of said ion implanted region for activation.
Claim 16
Dependent Claim
26 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, wherein said ions selected from Group II elements are Mg or Be ions.
Claim 17
Dependent Claim
30 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, further comprising the step of forming said stacked structure in step i) on a semi-insulative GaAs substrate.
Claim 18
Dependent Claim
43 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, further comprising the step of forming a mask on said stacked structure after step i), and wherein said ion implanting step is performed using said mask as an implanting mask.
Claim 19
Dependent Claim
47 words
A method of manufacturing semiconductor devices by ion implantation according to claim 16, further comprising the step of forming a high concentration n-type external emitter layer between said mask and said stacked structure, and subsequently patterning said external emitter layer using said mask as an etching mask.
Claim 20
Dependent Claim
27 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, wherein said external base region is formed in order to surround said emitter layer.
Claim 21
Dependent Claim
33 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, further comprising the step of forming an ohmic contact electrode on said external base region at least after step i).
Claim 22
Dependent Claim
35 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, wherein the implanted amount of ions selected from Group II elements is more than about 1 x 10 14 atoms/cm 2 .
Claim 23
Dependent Claim
41 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, wherein the peak concentration of implanted ions selected from Group II elements in said step ii) is more than about 1 x 10 atoms / cm 3 .
Claim 24
Dependent Claim
39 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, wherein the ratio of the implanted amount of atoms for P ions to the ions selected from Group II elements is between about 1:10 and 10:1.
Claim 25
Independent Claim
39 words
A method of manufacturing semiconductor devices by ion implantation according to claim, 13, wherein the ratio of the implanted amount of atoms for P ions to the ions selected from Group II elements is between about 1:2 and 2:1.
Claim 26
Dependent Claim
31 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, further comprising the step of depositing an insulating film on said stacked structure between steps i) and ii).
Claim 27
Dependent Claim
27 words
A method of manufacturing semiconductor devices by ion implantation according to claim 24, wherein said insulating film is selected from Si0 2 , PSG, SiON and A1N.
Claim 28
Dependent Claim
30 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1 or claim 15, wherein said heat treatment is performed by exposure to a lamp or by firing.
Claim 29
Dependent Claim
31 words
A method of manufacturing semiconductor devices by ion implantation according to claim 1 or claim 15, wherein said heat treatment is performed at a temperature of from about 700 - 1100°C.
Claim 30
Dependent Claim
23 words
A method of manufacturing semiconductor devices by ion implantation according to claim 13, wherein said each layer is formed by the MBE method.
Claim 31
Dependent Claim
73 words
A semiconductor device, comprising: a structure consisting essentially of an n-type GaAs collector layer, a p-type GaAs base layer and an n-type AlGaAs emitter layer stacked upon each other in the recited order; and a p-type external base region formed in a predetermined region of said structure, and having P and impurities selected from Group II elements and extending in depth from said n-type AlGaAs emitter layer to said n-type GaAs collector layer.
Claim 32
Dependent Claim
73 words
A semiconductor device, comprising: a structure consisting essentially of an n-type GaAs collector layer, a p-type GaAs base layer and an n-type AlGaAs emitter layer stacked upon each other in the recited order; and a p-type external base region formed in a predetermined region of said structure, and having P and impurities selected from Group II elements and extending in depth from said n-type AlGaAs emitter layer to said n-type GaAs collector layer.
Claim 33
Dependent Claim
20 words
A semiconductor device according to claim 29, wherein said impurities selected from Group II elements comprise Mg or Be atoms.
Claim 34
Dependent Claim
17 words
A semiconductor device according to claim 29, wherein said structure is formed on a semi-insulative GaAs substrate.
Claim 35
Dependent Claim
16 words
A semiconductor device according to claim 29, wherein said external base region surrounds said emitter layer.
Claim 36
Dependent Claim
19 words
A semiconductor device according to claim 29, further comprising an ohmic contact electrode formed on said external base region.
Claim 37
Dependent Claim
28 words
A semiconductor device according to claim 29, wherein the amount of impurities selected from Group II elements is more than about 1 x 10 14 atoms/cm 2 .
Claim 38
Dependent Claim
31 words
A semiconductor device according to claim 29, wherein the peak concentration of said impurities selected from Group II elements is more than about 1 x 10 atoms / cm 3 .
Claim 39
Dependent Claim
30 words
A semiconductor device according to claim 29, wherein the ratio of the amount of P atoms to the impurities selected from Group II elements is between about 1:10 and 10:1.
Claim 40
Dependent Claim
30 words
A semiconductor device according to claim 29, wherein the ratio of the amount of P atoms to the impurities selected from Group II elements is between about 1:2 and 2:1.
References Cited (Backward Citations)
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