Patent US1971027A successfully refreshed from Google Patents.
Patent EP0209196A2 successfully refreshed from Google Patents.
EP0209196A2
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EP
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Method of controlling forward voltage across schottky diode
Assignee: Koninklijke Philips NV
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Filing: 1986-07-15
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Granted: —
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Expires: 2006-07-15
Abstract
Abstract During the deposition of a metallic layer (62) on an N-type semiconductive region (24) to form a Schottky diode in a structure placed in a highly evacuated chamber (44), at least one selected gas is introduced into the chamber to control the threshold forward voltage V F across the diode. The selected gas preferably is oxygen, nitrogen or argon. The metallic layer (62) preferably comprises at least one of the metals Al, Cu, Au, Ag, Ni, Pd, Pt, Cr, Mo, W, Ti and In.
Inventors
- 👤 Ronald Clifford Flowers
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:48
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; Y; Y10; Y10S; Y10S148/00; Y10S148/139; Y10S148/14; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
98 words
A method wherein a metallic layer is deposited on an N-type semiconductive region of a structure placed in a highly evacuated chamber to form a rectifying junction between a first portion of the N-type region and a segment of the metallic layer and an electrical conductor is created to ohmically contact a second portion of the N-type region, characterized by the step of introducing at least one selected gas into the chamber during the deposition step in order to control the voltage V F between the metallic segment and the conductor when the rectifying junction is forwardly conductive.
Claim 2
Independent Claim
98 words
A method wherein a metallic layer is deposited on an N-type semiconductive region of a structure placed in a highly evacuated chamber to form a rectifying junction between a first portion of the N-type region and a segment of the metallic layer and an electrical conductor is created to ohmically contact a second portion of the N-type region, characterized by the step of introducing at least one selected gas into the chamber during the deposition step in order to control the voltage V F between the metallic segment and the conductor when the rectifying junction is forwardly conductive.
Claim 3
Dependent Claim
29 words
A method as in Claim 1 characterized by the step of evacuating the chamber to a pressure no greater than 10⁻⁵ torr before the gas introduction and deposition steps.
Claim 4
Dependent Claim
19 words
A method as in Claim 2 characterized in that the gas introduction step is started before the deposition step.
Claim 5
Dependent Claim
29 words
A method as in Claim 3 characterized in that the gas introduction step is performed during deposition of at least the first ten atomic monolayers of the metallic layer.
Claim 6
Dependent Claim
22 words
A method as in claim 3 characterized in that each selected gas is introduced into the chamber at a regulated partial pressure.
Claim 7
Dependent Claim
17 words
A method as in Claim 3 characterized in that each selected gas is oxygen, nitrogen, or argon.
Claim 8
Dependent Claim
25 words
A method as in Claim 6 characterized in that the pressure in the chamber is on the order of 1,33×10⁻⁴ Pa during the deposition step.
Claim 9
Dependent Claim
82 words
A method as in Claim 3 wherein the second portion is more highly doped than the first portion, the deposition step comprises evaporatively depositing atoms of the metallic layer on the N-type region and the metallic layer is selectively etched to divide it into a plurality of separated parts of which two are the segment and the conductor, characterized in that the metallic layer comprises at least one of aluminium, copper, gold, silver, nickel, palladium, platinum, chromium, molybdenum, tungsten, titanium, and iridium.
Claim 10
Dependent Claim
52 words
A method as in Claim 3 wherein the metallic layer consists substantially of aluminium and the N-type region consists substantially of doped monocrystalline silicon, characterized in that V F increases at constant current through the rectifying junction where the gas introduction step consists of substantially introducing oxygen or argon into the chamber.
Claim 11
Dependent Claim
50 words
A method as in Claim 3 wherein the metallic layer consists substantially of aluminum and the N-type region consists substantially of doped monocrystalline silicon, characterized in that V F decreases at constant current through the rectifying junction where the gas introduction step consists of substantially introducing nitrogen into the chamber.
References Cited (Backward Citations)
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