Patent EP0206937A2 successfully refreshed from Google Patents.
EP0206937A2
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EP
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Stress relieved intermediate insulating layer for multilayer metalization
Assignee: Fairchild Semiconductor Corp
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Filing: 1986-06-19
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Granted: —
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Expires: 2006-06-19
Abstract
Abstract @ There is disclosed herein a stress relieved intermediate insulating layer consisting of one or more layers of spun-on glass lying over a metallization pattern. The spun-on layers are allowed to crack from thermal stress imposed upon the structure. The cracks in the spun-on layers are then filled with a glass layer deposited by CVD or LPCVD.
Inventors
- 👤 William I. Lehrer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/662; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10W20/093; H10W20/097; H10W20/40; H10W20/45; H10W20/48; H10P14/6328; H10P14/6334; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S428/00; Y10S428/901
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
74 words
A method of providing a stress relieved dielectric layer over an integrated circuit comprising the steps of: mixing a predetermined solutibn of solvents and active ingredients; depositing a predetermined amount of the solution on a wafer containing said integrated circuit: spinning said wafer; baking said wafer and said solution until a glass is formed; heat treating said glass layer until it cracks; and depositing a second layer of insulator to fill in the cracks.
Claim 2
Independent Claim
74 words
A method of providing a stress relieved dielectric layer over an integrated circuit comprising the steps of: mixing a predetermined solutibn of solvents and active ingredients; depositing a predetermined amount of the solution on a wafer containing said integrated circuit: spinning said wafer; baking said wafer and said solution until a glass is formed; heat treating said glass layer until it cracks; and depositing a second layer of insulator to fill in the cracks.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein said deposition step comprises depositing a predetermined amount of said solution over a first layer interconnect pattern on said wafer which is fabricated in metal.,
Claim 4
Dependent Claim
42 words
The method of claim 1 wherein said step of mixing a solution includes the steps. of mixing sufficient quantities of tetraethoxysilane, a solvent that can dissolve tetraethoxysilane, water and an acid such that the resultant solution is approximately 20% by weight tetraethoxysilane.
Claim 5
Dependent Claim
56 words
The method of claim 1 wherein said step of mixing a solution includes the steps of mixing sufficient quantities of tetraethoxygermane and tetraethoxysilane with a solvent that can dissolve these two compounds and a compatible acid with sufficient water to result in an ultimate solution which is 10 to -20 percent by weight tetraethoxygermane and tetraethoxysilane.
Claim 6
Dependent Claim
35 words
The method of claim 1 wherein said step of spinning includes spinning said wafer at an RPM selected to result in a predetermined post bake film thickness for a given solution solids content and viscosity.
Claim 7
Dependent Claim
49 words
The method of claim 1 wherein said bake step to form the oxide comprises the steps of baking the wafer and solution at a minimum of 400 degrees centigrade for a sufficient time to drive out all the solvents and water and to form the oxides comprising the glass.
Claim 8
Dependent Claim
54 words
The method of claim 1 wherein said bake step to form the oxide comprises the steps of baking the wafer and solution at a temperature sufficient to drive out the water and solvents in a reasonable time and then baking the resulting structure at a temperature sufficient to create the oxides of the glass.
Claim 9
Dependent Claim
24 words
The method of claim 7 wherein said second bake step is done at a temperature sufficient to create a glass with a predetermined density.
Claim 10
Dependent Claim
22 words
The method of claim 7 wherein said first bake step is done at approximately 135 degrees centigrade for 5 to 10 minutes.
Claim 11
Dependent Claim
24 words
The method of claim 7 wherein said second bake step is done at approximately 450 to 500 degrees centigrade for 15 to 30 minutes.
Claim 12
Dependent Claim
26 words
The method of claim 7 wherein said second bake step is done at a temperature which is as high as possible without damaging the underlying structure.
Claim 13
Dependent Claim
19 words
The method of claim 1 wherein said spinning step includes spinning the wafer at between 2000 and 4000 RPM.
Claim 14
Dependent Claim
37 words
The method of claim 1 wherein said solution mixing step includes mixing approximately 20 grams of tetraethoxysilane with approximately 60 grams of isoproponal alcohol and approximately 20 grams of water and approximately 0.6 grams of nitric acid.
Claim 15
Dependent Claim
61 words
The method of claim 1 wherein said mixing step includes mixing sufficient amounts of tetraethoxygermane, tetraethoxysilane, a solvent and water and a phosphoric acid such the post bake spun on glass layer is comprised of approximately 40 to 50 mole percent silicon dioxide, 55 to 40 mole percent germanium dioxide and 1 to 5 mole percent P 2 O 5 .
Claim 16
Dependent Claim
26 words
The method of claim 1 wherein said step of depositing a second layer of insulator includes the step of depositing an insulator by chemical vapor deposition.
Claim 17
Dependent Claim
22 words
The method of claim 1 wherein said step of depositing a second layer of insulator includes depositing a layer of silicon dioxide.
Claim 18
Dependent Claim
15 words
The method of claim 16 wherein said depositing step includes depositing by chemical vapor deposition.
Claim 19
Dependent Claim
29 words
The method of claim 16 wherein said depositing step includes the step of decomposing silane and oxygen at less than 400 degrees centigrade in a chemical vapor deposition step.
Claim 20
Dependent Claim
15 words
The method of claim 18 wherein the chemical vapor depostion is done at atmospheric pressure.
Claim 21
Dependent Claim
18 words
The method of claim 1 wherein said deposition step includes depositing the insulator by low temperature plasma depostion.
Claim 22
Dependent Claim
34 words
The method of claim 1 wherein said step of depositing a second layer of insulator includes the step of depositing an insulator that matches the chemical composition of the spun on layer of insulator.
Claim 23
Independent Claim
162 words
A method of providing a stress relieved, smooth insulating layer on an integrated circuit comprising the steps of: mixing a solution of tetraethoxysilane, a solvent, water and a compatible acid such that a 20% TEOS solution is achieved with a pH between 1.5 and 2.0 is achieved: depositing a sufficient amount of the solution on a wafer containing the integrated circuit such that the entire wafer surface is covered: removing a sufficient amount of the solvents to form a gel: spinning the wafer at an RPM selected to achieve a post bake film thickness which is selected in accordance with the integrated circuit topography and the intended use of the film: baking the wafer and the film until an insulating film is formed; heat treating the wafer and film until it cracks; depositing a second layer of insulator which fills in the cracks of the spun on film and which matches the chemical composition and etch rate of the spun on layer.
Claim 24
Independent Claim
162 words
A method of providing a stress relieved, smooth insulating layer on an integrated circuit comprising the steps of: mixing a solution of tetraethoxysilane, a solvent, water and a compatible acid such that a 20% TEOS solution is achieved with a pH between 1.5 and 2.0 is achieved: depositing a sufficient amount of the solution on a wafer containing the integrated circuit such that the entire wafer surface is covered: removing a sufficient amount of the solvents to form a gel: spinning the wafer at an RPM selected to achieve a post bake film thickness which is selected in accordance with the integrated circuit topography and the intended use of the film: baking the wafer and the film until an insulating film is formed; heat treating the wafer and film until it cracks; depositing a second layer of insulator which fills in the cracks of the spun on film and which matches the chemical composition and etch rate of the spun on layer.
Claim 25
Dependent Claim
59 words
The method of claim 22 wherein the mixing step includes the step of mixing in a sufficient quantity of tetraethoxygermane and phosphoric acid such that the final composition of the spun on layer is 40 to 50 mole percent silicon dioxide, 55 to 40 mole percent germanium dioxide and 1 to 5 mole percent P 2 0 5 .
Claim 26
Dependent Claim
73 words
The method of claim 22 wherein said baking step includes the steps of baking the wafer and solution at a temperature of approximately 135 degrees centigrade for a sufficient time to drive off all the solvents, preferably 5 to 10 minutes, and then baking the wafer at a temperature of between 450 and 500 degrees centigrade for a sufficient time to create the oxides of the glass, preferably between 15 and 30 minutes.
Claim 27
Dependent Claim
38 words
A stress relieved insulating structure on an integrated circuit comprising: a cracked layer of glass deposited over a first metalization layer of said integrated circuit: and a second insulating layer deposited in the cracks of said first layer.
Claim 28
Dependent Claim
38 words
A stress relieved insulating structure on an integrated circuit comprising: a cracked layer of glass deposited over a first metalization layer of said integrated circuit: and a second insulating layer deposited in the cracks of said first layer.
Claim 29
Dependent Claim
18 words
The structure of claim 25 wherein said first layer is smooth in places where it is not cracked.
Claim 30
Dependent Claim
14 words
The structure of claim 25 wherein said first layer is spun on silicon dioxide.
Claim 31
Dependent Claim
22 words
The structure of claim 25 wherein said first layer is spun on silicon dioxide, germanium dioxide and P 2 O 5 .
Claim 32
Dependent Claim
33 words
The structure of claim 28 wherein the glass is 40 to 50 mole percent silicon dioxide, 55 to 40 mole percent germanium dioxide and 1 to 5 percent P 2 O 5 .
Claim 33
Dependent Claim
15 words
The structure of claim 25 wherein said second layer is a chemical vapor deposition oxide.
Claim 34
Dependent Claim
20 words
The structure of claim 25 wherein said second layer of insulating material matches the chemical composition of the first layer.
Claim 35
Dependent Claim
32 words
The structure of claim 25 wherein said second layer of insulating material matches the etch rate of said first layer in any etchant which will etch both said first and second layers.
References Cited (Backward Citations)
No citation records indexed.
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