Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
134 words
A phased array semiconductor laser (10) having a series of multiple lasing elements disposed in optical guide regions relative to an active region (16) for light wave generation and propogation under lasing conditions and wherein the optical fields of the lasing elements are coupled to provide a phase-locked condition across the array, structural means associated with said laser providing adjacent regions between the optical guide regions to produce higher gain compared with the gain experienced in the optical guide regions thereby to modulate spatially the current distribution across the array, so that the integral of the gain of the optical field present in the active region of the laser is higher in the adjacent regions compared with the optical guide regions, the structural means comprising the introduction of impurity-induced disordering in the adjacent regions.
Claim 2
Dependent Claim
134 words
A phased array semiconductor laser (10) having a series of multiple lasing elements disposed in optical guide regions relative to an active region (16) for light wave generation and propogation under lasing conditions and wherein the optical fields of the lasing elements are coupled to provide a phase-locked condition across the array, structural means associated with said laser providing adjacent regions between the optical guide regions to produce higher gain compared with the gain experienced in the optical guide regions thereby to modulate spatially the current distribution across the array, so that the integral of the gain of the optical field present in the active region of the laser is higher in the adjacent regions compared with the optical guide regions, the structural means comprising the introduction of impurity-induced disordering in the adjacent regions.
Claim 3
Dependent Claim
17 words
The phased array semiconductor laser of claim 1, wherein said impurity induced disordering comprises an impurity diffusion.
Claim 4
Dependent Claim
17 words
The phased array semiconductor laser of claim 1, wherein said impurity induced disordering comprises an implant/anneal technique.
Claim 5
Dependent Claim
55 words
The phased array semiconductor laser of any preceding claim, where the laser includes a cladding layer (18) in proximity to the active region and comprising a superlattice structure, the optical guide regions including the superlattice structure not disordered by the impurity-induced disordering, and the adjacent regions including the superlattice structure disordered by the impurity-induced disordering.
Claim 6
Dependent Claim
18 words
The phased array semiconductor laser of any preceding claim, wherein the active region is a single active layer.
Claim 7
Dependent Claim
16 words
The phased array semiconductor laser of claim 4 or 5, wherein said active region is planar.
Claim 8
Dependent Claim
16 words
The phased array semiconductor laser of claim 4 or 5, wherein said active region is nonplanar.
Claim 9
Dependent Claim
18 words
The phased array semiconductor laser of any preceding claim, wherein said active region is a single quantum well.
Claim 10
Dependent Claim
21 words
The phased array semiconductor laser of any of claims 1 to 7, where the active region is a multiple quantum well.
Claim 11
Dependent Claim
24 words
The phased array semiconductor laser of any preceding claim, wherein the active region is a separate quantum well structure in a separate confinement cavity.