EP0205686A1
Expired / Lapsed
EP
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Die-bonding electroconductive paste
Assignee: Kidd Inc
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Filing: 1985-06-13
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Granted: —
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Expires: 2005-06-13
Abstract
Abstract A die-bonding electroconductive paste for bonding a semiconductor material containing at least one element having the same valency as the valency of the semiconductor element to be die-bonded, or a compound of that element and a reducing substance, permitting ohmic contact to be effected at a temperature of not less than 100°C.
Inventors
- 👤 Shoichi Kimura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 23:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
66 words
A die-bonding electroconductive paste for bonding a semi-conductor material, characterised in that the paste contains a first component comprising at least one element having the same valency as the valency of the semiconductor material to be die-bonded or a compound of that element, and a second component comprising a reducing substance, thereby permitting ohmic contact to be effected at a temperature of not less than 100°C.
Claim 2
Dependent Claim
66 words
A die-bonding electroconductive paste for bonding a semi-conductor material, characterised in that the paste contains a first component comprising at least one element having the same valency as the valency of the semiconductor material to be die-bonded or a compound of that element, and a second component comprising a reducing substance, thereby permitting ohmic contact to be effected at a temperature of not less than 100°C.
Claim 3
Dependent Claim
64 words
An electroconductive paste as claimed in Claim 1 characterised in that it comprises 5 to 90% by weight of the first component expressed in terms of the element, 0.5 to 50% by weight of the reducing substance, 0 to 80% by weight of finely powdered electroconductive substance, 3 to 45% by weight of a binder, and 0 to 30% by weight of a solvent.
Claim 4
Dependent Claim
39 words
An electroconductive paste as claimed in Claim 1 or Claim 2, characterised in that the semiconductor material consists of an element from Group IV, elements of Groups III-V, or elements of Groups II-VI, in dependence upon the desired valency.
Claim 5
Dependent Claim
34 words
An electroconductive paste as claimed in Claim 2 or Claim 3 characterised in that the fine electroconductive powder is gold, silver, copper, nickel, rhodium, palladium, silver-palladium or a mixture of any of these metals.
Claim 6
Dependent Claim
28 words
An electroconductive paste as claimed in any of Claims 2 to 4 characterised in that the fine electroconductive powder has an average particle diameter of 1 to 20µm.
Claim 7
Dependent Claim
35 words
An electroconductive paste as claimed in any preceding claim characterised in that the reducing substance is a metal hydride, a metal carbide,a higher fatty acid, an organic metal compound, an organic silicon compound or hydrazine.
Claim 8
Dependent Claim
25 words
An electroconductive paste as claimed in any of Claims 2 to 6 characterised in that the binder is an epoxy resin or a glycol ether.
Claim 9
Dependent Claim
24 words
An electroconductive paste as claimed in any preceding claim characterised in that the first component has an average particle diameter of 0.5 to 50µm.
Claim 10
Dependent Claim
43 words
An electroconductive paste as claimed in any preceding claim characterised in that the semiconductor material is an element from Group IV and the first component is a tetravalent element comprising one or more of silicon, germanium, carbon, titanium, zirconium, tin, hafnium and lead.
Claim 11
Dependent Claim
64 words
An electroconductive paste as claimed in any of Claims I to 8 characterised in that the semiconductor material is an element of Groups III-V and the first component is a trivalent element comprising one or more or boron, aluminium, scandium, gallium, yttrium, indium, lanthanoids and actinoids with a pentavalent element comprising one or more of nitrogen, phosphorous, vanadium, arsenic, niobium, antimony, tantalum and bismuth.
Claim 12
Dependent Claim
60 words
An electroconductive paste as claimed in any of Claims 1 to 8 characterised in that the semiconductor material is an element of Groups II-VI and the first component is a divalent element comprising one or more of beryllium, magnesium, zinc, cadmium and mercury with a hexavalent element comprising one or more of chromium, molybdenum, tungsten, oxygen, sulphur, selenium and tellurium.
Claim 13
Dependent Claim
56 words
An electroconductive paste as claimed in any preceding claim characterised in that it comprises 20 to 60% by weight of the first component, 1 to 10% by weight of the reducing substance, 25 to 60% by weight of fine semiconductor powder, 10 to 30% by weight of binder and 3 to 20% by weight of solvent.
References Cited (Backward Citations)
GB1558764A
Cited
US4293451A
Cited
DE2829917A1
Cited
US4356505A
Cited
FR2505543A1
Cited
FR2515675A1
Cited
EP0110307A2
Cited
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