Patent EP0205139A2 successfully refreshed from Google Patents.
EP0205139A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Distributed feedback semiconductor laser device
Assignee: NEC Corp
•
Filing: 1986-06-09
•
Granted: —
•
Expires: 2006-06-09
Abstract
Abstract The invention relates to a distributed feedback semiconductor laser device and a method of manufacturing a semiconductor laser. The semiconductor laser device comprises an active layerfor emitting light in response to the injection of current, a diffraction grating neighboring said active layer to interact with the light, current injecting means for injecting current into said active layerand control means for controlling the distribution of current which is injected into said active layerin a configuration which corresponds to the field intensity ditribution of the light in the direction of the laser optical axis inside said active layer The semiconductor laser device is operable in a stable single mode and producible in a high yield.
Inventors
- 👤 Ikuo Mito
- 👤 Masayuki Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 22:24
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/0625; H01S5/10; H01S5/12; H01S5/06255; H01S5/06258; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; H01S5/2277
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
78 words
A semiconductor laser device comprising: an active layer for emitting light in response to injection of current; a diffraction grating neighboring said active layer to interact with the light; current injecting means for injecting current into said active layer; and control means for controlling a distribution of current, which is injected into said active layer, in a configuration which corresponds to a field intensity distribution of light in a direction of laser optical axis inside said active layer.
Claim 2
Dependent Claim
78 words
A semiconductor laser device comprising: an active layer for emitting light in response to injection of current; a diffraction grating neighboring said active layer to interact with the light; current injecting means for injecting current into said active layer; and control means for controlling a distribution of current, which is injected into said active layer, in a configuration which corresponds to a field intensity distribution of light in a direction of laser optical axis inside said active layer.
Claim 3
Dependent Claim
41 words
A semiconductor laser device as claimed in claim 1, wherein said current injecting means comprises a positive and a negative electrode., one of said positive and negative electrodes which is closer to said active layer than the other comprising divided electrodes.
Claim 4
Dependent Claim
21 words
A semiconductor laser device as claimed in claim 2, wherein load resistors are connected one to each of said divided electrodes.
Claim 5
Dependent Claim
31 words
A semiconductor laser device as claimed in claim 3, wherein said divided electrodes are interconnected by fusing one to each metal which is provided on a heat sink for divisional fusing.
Claim 6
Dependent Claim
65 words
A semiconductor laser device as claimed in any of claims 1 to 4, wherein said semiconductor laser device comprises a semiconductor laser device including a cladding layer which neighbors said active layer and is greater in bandgap than said active layer, said cladding layer having a resistivity which varies in the laser optical axis direction and in correspondence with the field intensity distribution of light.
Claim 7
Dependent Claim
32 words
A semiconductor laser device as claimed in any of claims-1 to 5, wherein said diffraction grating includes a phase shifted region where a phase of said diffraction grating is shifted by quater-wave.
Claim 8
Dependent Claim
27 words
A semiconductor laser device as claimed in claim 6, wherein each of opposite ends of said active layer is provided with a reflective film forming low reflectivity.
Claim 9
Dependent Claim
42 words
A semiconductor laser device as claimed in any of claims 1 to 7, wherein one of opposite ends of said active layer is provided with a reflective ' film forming high reflectivity and the other end a reflective film forming low reflectivity.
Claim 10
Independent Claim
118 words
A method of manufacturing a semiconductor laser, comprising the steps of: forming on a semiconductor substrate of a first conductivity type an active layer and a guide layer which is positioned in the vicinity of and above or below said active layer and has a periodically corrugated surface, and forming a cladding layer made up of a low resistance and a high resistance layer on.a laminated structure which consists of said active layer and guide layer; and forming in a part of said high resistance layer of said cladding layer by ion injection a low resistance layer which is distributed along an axis of a resonator and extends throughout said high resistance layer to said low resistance layer.
Claim 11
Independent Claim
118 words
A method of manufacturing a semiconductor laser, comprising the steps of: forming on a semiconductor substrate of a first conductivity type an active layer and a guide layer which is positioned in the vicinity of and above or below said active layer and has a periodically corrugated surface, and forming a cladding layer made up of a low resistance and a high resistance layer on.a laminated structure which consists of said active layer and guide layer; and forming in a part of said high resistance layer of said cladding layer by ion injection a low resistance layer which is distributed along an axis of a resonator and extends throughout said high resistance layer to said low resistance layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.