Patent EP0203578A2 successfully refreshed from Google Patents.
EP0203578A2
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EP
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Semiconductor device having epitaxial insulating film and method of producing the same
Assignee: Hitachi Ltd
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Filing: 1986-05-27
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Granted: —
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Expires: 2006-05-27
Abstract
Abstract In a semiconductor device, a metal oxide single crystal film (13, 15) having at least one-layered C-rare earth crystalline structure is formed by epitaxial growth on a semiconductor single crystal substrate (11) having a diamond structure or a cubic zincblende (ZnS) structure as its crystalline structure. Since the difference in thermal expansion coefficient is small between the semiconductor and the oxide, the thermal strain that develops in the semiconductor device can be reduced.
Inventors
- 👤 Kazumasa Takagi
- 👤 Kenzo Susa
- 👤 Toshio Kobayashi
- 👤 Takanobu Hitachi Dai 2 Kyoshin-Ryo Takayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69396; H10P14/6349; H10P14/6329
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
49 words
A semiconductor device having an epitaxial insulating film, which comprises an oxide single crystal film (13, 15) having at least one-layered C-rare earth crystalline structure formed by epitaxial growth on a semiconductor single crystal substrate (1) having a diamond structure or a cubic zincblende structure as its crystalline structure.
Claim 2
Dependent Claim
49 words
A semiconductor device having an epitaxial insulating film, which comprises an oxide single crystal film (13, 15) having at least one-layered C-rare earth crystalline structure formed by epitaxial growth on a semiconductor single crystal substrate (1) having a diamond structure or a cubic zincblende structure as its crystalline structure.
Claim 3
Dependent Claim
53 words
A semiconductor device having an epitaxial insulating film according to claim 1, wherein said oxide having the C-rare earth structure is a oxide represented by the molecular formula Zn 2 0 3 (where Ln is at least one metal element selected from the group consisting of yttrium, scandium and rare earth metal elements).
Claim 4
Independent Claim
90 words
A method of producing a semiconductor device having an epitaxial insulating film, which comprises the steps of supplying vapor of an Ln metal (where Ln represents yttrium, scandium or rare earth metal elements) and oxygen gas or an oxygen-containing oxidizing compound gas onto a semiconductor single crystal substrate having a diamond structure or a cubic zincblende structure as its crystalline structure, and effecting epitaxial growth of a metal oxide film represented by the molecular formula Ln 2 O 3 and having a C-rare earth crystalline structure on said semiconductor substrate.
Claim 5
Independent Claim
90 words
A method of producing a semiconductor device having an epitaxial insulating film, which comprises the steps of supplying vapor of an Ln metal (where Ln represents yttrium, scandium or rare earth metal elements) and oxygen gas or an oxygen-containing oxidizing compound gas onto a semiconductor single crystal substrate having a diamond structure or a cubic zincblende structure as its crystalline structure, and effecting epitaxial growth of a metal oxide film represented by the molecular formula Ln 2 O 3 and having a C-rare earth crystalline structure on said semiconductor substrate.
References Cited (Backward Citations)
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