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EP0201867A2
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Method of manufacturing a bipolar transistor
Assignee: NTT Inc
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Filing: 1986-05-07
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Granted: —
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Expires: 2006-05-07
Abstract
Abstract A bipolar transistor includes collector, base and emitter regions. The collector region consists of a first semiconductor region of a first conductivity type and formed in contact with a surface of a semiconductor layer. The base region consists of a second semiconductor region of a second conductivity type formed within the collector region to be in contact with the surface of the semiconductor layer. The emitter region consists of a third semiconductor region of the first conductivity type formed within the base region to be in contact with the surface of the semiconductor layer. The transistor also includes collector, base, and emitter electrodes. The collector and base electrodes are connected to the collector and base regions at opposite edges of a single opening formed In a field insulating film covering the surface of the semiconductor layer. The collector and base electrodes consist of a conductor. The emitter electrode is connected to the emitter region and consists of a conductor. The transistor further includes first and second insulating interlayers. The first insulating interlayer is formed between the collector and emitter electrodes. The second insulating interlayer is formed between the emitter and base electrodes. A distance between the collector and emitter electrodes on the surface of the semicon- ductpr layer is substantially the same as that between the emitter and base electrodes.
Inventors
- 👤 Tetsushi Sakai
- 👤 Yoshiji Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 09:09
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P76/00; H10P76/40; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
202 words
A bipolar transistor comprising: a collector region consisting of a first semiconductor region of a first conductivity type, said collector region being formed in contact with a surface of a semiconductor layer; a base region consisting of a second semiconductor region of a second conductivity type formed within said collector region to be in contact with the surface of said semiconductor layer; an emitter region consisting of a third semiconductor region of the first conductivity type formed within said base region to be in contact with the surface of said semiconductor layer; collector and base electrodes connected to said collector and base regions at opposite edges of a single opening formed in a field insulating film covering the surface of said semiconductor layer, said collector and base electrodes consisting of a conductor; an emitter electrode connected to said emitter region and consisting of a conductor; a first insulating interlayer formed between said collector electrode and said emitter electrode; and a second insulating interlayer formed between said emitter electrode and said base electrode, wherein a distance between said collector and emitter electrodes on the surface of said semiconductor layer is substantially the same as that between said emitter electrode and said base electrode.
Claim 2
Dependent Claim
202 words
A bipolar transistor comprising: a collector region consisting of a first semiconductor region of a first conductivity type, said collector region being formed in contact with a surface of a semiconductor layer; a base region consisting of a second semiconductor region of a second conductivity type formed within said collector region to be in contact with the surface of said semiconductor layer; an emitter region consisting of a third semiconductor region of the first conductivity type formed within said base region to be in contact with the surface of said semiconductor layer; collector and base electrodes connected to said collector and base regions at opposite edges of a single opening formed in a field insulating film covering the surface of said semiconductor layer, said collector and base electrodes consisting of a conductor; an emitter electrode connected to said emitter region and consisting of a conductor; a first insulating interlayer formed between said collector electrode and said emitter electrode; and a second insulating interlayer formed between said emitter electrode and said base electrode, wherein a distance between said collector and emitter electrodes on the surface of said semiconductor layer is substantially the same as that between said emitter electrode and said base electrode.
Claim 3
Dependent Claim
38 words
A transistor according to claim 1, wherein the distance between said collector and emitter electrodes on the surface of said semiconductor layer and the distance between said emitter and base electrodes are not more than 0.5 pm each.
Claim 4
Dependent Claim
29 words
A transistor according to claim 1, wherein said collector, emitter, and base electrodes are made of a material selected from the group consisting of doped polysilicon and doped silicide.
Claim 5
Dependent Claim
23 words
A transistor according to claim 1, wherein said collector and base electrodes extend from edges of said opening onto said field insulating film.
Claim 6
Dependent Claim
14 words
A transistor according to claim 1, wherein said semiconductor layer comprises a semiconductor substrate.
Claim 7
Independent Claim
343 words
A method of manufacturing a bipolar transistor, including at least the steps of: forming a first insulating film as a field insulating film on a semiconductor substrate having a collector region of a first conductivity type; forming a first nondoped semiconductor layer on said first insulating film; oxidizing said first nondoped semiconductor layer except for a part of said collector region to form a second insulating film; doping an impurity of a second conductivity type in part of a region of said first nondoped semiconductor layer, thereby forming a first doped region; partially etching a part of a nondoped portion of said first nondoped semiconductor layer which is adjacent to said first doped region and located on said collector region, thereby forming a groove in said first nondoped semiconductor layer; doping an impurity of the first conductivity type to form a second doped region in a region of said first nondoped semiconductor layer which excludes said first doped region; side-etching said first insulating film in the groove excluding a vicinity of said second insulating film to expose parts of lower surfaces of said second doped semiconductor layer of the first conductivity type and said first doped semiconductor layer of the second conductivity type; filling side-etched portions with a lêcond semiconductor layer; doping an impurity of the second conductivity type in a surface of said collector region in the groove to form a base region; forming a third insulating film and a third semiconductor layer on the entire surface; removing said third insulating film and said third semiconductor layer except for portions on side wall of the groove by using anisotropic etching to expose a surface of said base region at the center of the groove; forming a fourth semiconductor layer containing an impurity of the first conductivity type on the surface of said base region and in a region surrounded by said third insulating film and said third semiconductor layer; and diffusing the impurity of the first conductivity type from said fourth semiconductor layer into said base region to form an emitter region.
Claim 8
Independent Claim
343 words
A method of manufacturing a bipolar transistor, including at least the steps of: forming a first insulating film as a field insulating film on a semiconductor substrate having a collector region of a first conductivity type; forming a first nondoped semiconductor layer on said first insulating film; oxidizing said first nondoped semiconductor layer except for a part of said collector region to form a second insulating film; doping an impurity of a second conductivity type in part of a region of said first nondoped semiconductor layer, thereby forming a first doped region; partially etching a part of a nondoped portion of said first nondoped semiconductor layer which is adjacent to said first doped region and located on said collector region, thereby forming a groove in said first nondoped semiconductor layer; doping an impurity of the first conductivity type to form a second doped region in a region of said first nondoped semiconductor layer which excludes said first doped region; side-etching said first insulating film in the groove excluding a vicinity of said second insulating film to expose parts of lower surfaces of said second doped semiconductor layer of the first conductivity type and said first doped semiconductor layer of the second conductivity type; filling side-etched portions with a lêcond semiconductor layer; doping an impurity of the second conductivity type in a surface of said collector region in the groove to form a base region; forming a third insulating film and a third semiconductor layer on the entire surface; removing said third insulating film and said third semiconductor layer except for portions on side wall of the groove by using anisotropic etching to expose a surface of said base region at the center of the groove; forming a fourth semiconductor layer containing an impurity of the first conductivity type on the surface of said base region and in a region surrounded by said third insulating film and said third semiconductor layer; and diffusing the impurity of the first conductivity type from said fourth semiconductor layer into said base region to form an emitter region.
Claim 9
Dependent Claim
30 words
A method according to claim 6, wherein the impurity of the first conductivity type is an n-type impurity, and the impurity of the second conductivity type is a p-type impurity.
Claim 10
Dependent Claim
30 words
A method according to claim 6, wherein the impurity of the first conductivity type is a p-type impurity, and the impurity of the second conductivity type is an n-type impurity.
Claim 11
Dependent Claim
95 words
A method according to claim 6, wherein the step of forming the groove in said first semiconductor layer includes the steps of: forming an oxide film on said first nondoped semiconductor layer; forming a nitride film on said oxide film and patterning said nitride film; etching said oxide film using said nitride film as a mask and partially side-etching said oxide film under said nitride film to partially expose said first nondoped semiconductor layer excluding said first doped region; and partially etching an exposed portion of said first nondoped semiconductor layer to form the groove.
Claim 12
Dependent Claim
110 words
A method according to claim 6, wherein said first insulating film consists of a first oxide film and a first nitride film formed thereon, and the step of exposing the lower surface of said first semiconductor layer comprises the steps of: forming a second nitride film and a second oxide film on an exposed portion of said first nitride film in said groove; etching a portion of said second oxide film at a bottom of the groove excluding a vicinity of said second insulating film covered therewith; and etching said first and second nitride films and side-etching said second nitride film to partially expose said first and second semiconductor layers.
Claim 13
Dependent Claim
25 words
A method according to claim 6, wherein said semiconductor layers are made of a material selected from the group consisting of polysilicon and a silicide.
Claim 14
Independent Claim
343 words
A method of manufacturing a bipolar transistor, including at least the steps of: forming a first insulating film as a field insulating film on a semiconductor substrate having a collector region of a first conductivity type; forming a first nondoped semiconductor layer on said first insulating film; oxidizing said first nondoped semiconductor layer except for a part of said collector region to form a second insulating film; doping an impurity of a first conductivity type in part of a region of said first nondoped semiconductor layer, thereby forming a first doped region; partially etching a part of a nondoped portion of said first nondoped semiconductor layer which is adjacent to said first doped region and located on said collector region, thereby forming a groove in said first nondoped semiconductor layer; doping an impurity of the second conductivity type to form a second doped region in a region of said first nondoped semiconductor layer which excludes said first doped region; side-etching said first insulating film in the groove excluding a vicinity of said second insulating film to expose parts of lower surfaces of said second doped semiconductor layer of the first conductivity type and said first doped semiconductor layer of the second conductivity type; filling side-etched portions with a second semiconductor layer; doping an impurity of the second conductivity type in a surface of said collector region in the groove to form a base region; forming a third insulating film and a third semiconductor layer on the entire surface; removing said third insulating film and said third semiconductor layer except for portions on side wall of the groove by using anisotropic etching to expose a surface of said base region at the center of the groove; forming a fourth semiconductor layer containing an impurity of the first conductivity type on the surface of said base region and in a region surrounded by said third insulating film and said third semiconductor layer; and diffusing the impurity of the first conductivity type from said fourth semiconductor layer into said base region to form an emitter region.
Claim 15
Independent Claim
343 words
A method of manufacturing a bipolar transistor, including at least the steps of: forming a first insulating film as a field insulating film on a semiconductor substrate having a collector region of a first conductivity type; forming a first nondoped semiconductor layer on said first insulating film; oxidizing said first nondoped semiconductor layer except for a part of said collector region to form a second insulating film; doping an impurity of a first conductivity type in part of a region of said first nondoped semiconductor layer, thereby forming a first doped region; partially etching a part of a nondoped portion of said first nondoped semiconductor layer which is adjacent to said first doped region and located on said collector region, thereby forming a groove in said first nondoped semiconductor layer; doping an impurity of the second conductivity type to form a second doped region in a region of said first nondoped semiconductor layer which excludes said first doped region; side-etching said first insulating film in the groove excluding a vicinity of said second insulating film to expose parts of lower surfaces of said second doped semiconductor layer of the first conductivity type and said first doped semiconductor layer of the second conductivity type; filling side-etched portions with a second semiconductor layer; doping an impurity of the second conductivity type in a surface of said collector region in the groove to form a base region; forming a third insulating film and a third semiconductor layer on the entire surface; removing said third insulating film and said third semiconductor layer except for portions on side wall of the groove by using anisotropic etching to expose a surface of said base region at the center of the groove; forming a fourth semiconductor layer containing an impurity of the first conductivity type on the surface of said base region and in a region surrounded by said third insulating film and said third semiconductor layer; and diffusing the impurity of the first conductivity type from said fourth semiconductor layer into said base region to form an emitter region.
References Cited (Backward Citations)
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