Patent EP0201686A1 successfully refreshed from Google Patents.
EP0201686A1
Expired / Lapsed
EP
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Semiconductor device comprising a superlattice
Assignee: Sony Corp
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Filing: 1986-03-13
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Granted: —
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Expires: 2006-03-13
Abstract
Abstract A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer (2) in which a plurality of different semiconductor layers (L 1 ,L 2 ,...L n ) made of less than 8 monolayers containing a fraction or a binary compound semiconductor are alternately and epitaxially grown and a main current direction is selected to be in the direction across said superlattice layer.
Inventors
- 👤 Akira Ishibashi
- 👤 Yoshifumi Mori
- 👤 Masao Itabashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 10:16
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10D10/00; H10D10/80; H10D10/821; H10D10/881; Y; Y10; Y10S; Y10S148/00; Y10S148/011; Y10S148/056; Y10S148/072; Y10S148/097; Y10S148/119; Y10S148/16
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
75 words
A semiconductor apparatus characterized in that the entire or part of an electron active region is formed by a superlattice structure semiconductor layer (2) in which a plurality of different semiconductor layers (L 1 ,L 2 , ...L n ) made of less than 8 monolayers containing a fraction or a binary compound semiconductor are alternately and epitaxially grown and a main current direction is selected to be in the direction across said superlattice layer.
References Cited (Backward Citations)
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