Photoelectric converting device
Abstract
Abstract A photoelectric converting device comprises a plurality of photoelectric converting cells. Each cells has a semiconductor transistor consisting of two main electrode regions (12) (4) formed of a semiconductor of one conductivity type and a control electrode region (10) formed of a semiconductor of the opposite conductivity type, and a capacitor (11) (13) (10) for controlling a potential of the control electrode region in a floating state. Each of the photoelectric converting cells performs at least the operations to accumulate carriers generated due to an incident light into the control electrode region and read out an accumulated voltage generated due to the accumulated carriers by controlling the potential of the control electrode region in the floating state through the capacitor. An insolating region for electrically isolating the adjacent photoelectric converting cells is constituted by an insulating region (8) formed on the basis of a concave portion formed due to an etching and a semiconductor region (7) having a high concentration formed under the insulating region. The high concentration semiconductor region consists of a semiconductor of the same conductivity type as that of the main electrode regions of the photoelectric converting cells.
Inventors
- 👤 Shiro Arikawa
- 👤 Shigetoshi Sugawa
Bibliographic Details
Claims Analysis
Total Claims: 4References Cited (Backward Citations)
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