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EP0200552A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Photoelectric converting device

Assignee: Canon Inc
•
Filing: 1986-05-01
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Granted: —
•
Expires: 2006-05-01
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Abstract

Abstract A photoelectric converting device comprises a plurality of photoelectric converting cells. Each cells has a semiconductor transistor consisting of two main electrode regions (12) (4) formed of a semiconductor of one conductivity type and a control electrode region (10) formed of a semiconductor of the opposite conductivity type, and a capacitor (11) (13) (10) for controlling a potential of the control electrode region in a floating state. Each of the photoelectric converting cells performs at least the operations to accumulate carriers generated due to an incident light into the control electrode region and read out an accumulated voltage generated due to the accumulated carriers by controlling the potential of the control electrode region in the floating state through the capacitor. An insolating region for electrically isolating the adjacent photoelectric converting cells is constituted by an insulating region (8) formed on the basis of a concave portion formed due to an etching and a semiconductor region (7) having a high concentration formed under the insulating region. The high concentration semiconductor region consists of a semiconductor of the same conductivity type as that of the main electrode regions of the photoelectric converting cells.

Inventors

  • 👤 Shiro Arikawa
  • 👤 Shigetoshi Sugawa

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 05:05
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/197; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 190 words
A photoelectric converting device comprising a plurality of photoelectric converting cells which are arranged and each of which has: a semiconductor transistor consisting of two main electrode regions formed of a semiconductor of one conductivity type and a control electrode region formed of a semiconductor of the opposite conductivity type; and a capacitor for controlling a potential of said control electrode region in a floating state. wherein each of said photoelectric converting cells performs at least the operations to accumulate carriers generated due to an incident light into said control electrode region and read out an accumulated voltage generated due to said accumulated carriers by controlling the potential of said control electrode region in the floating state through said capacitor, an isolating region for electrically isolating said adjacent photoelectric converting cells is constituted by an insulating region formed on the basis of a concave portion formed due to an etching and a semiconductor region having a high concentration formed under said insulating region, and said high concentration semiconductor region consists of a semiconductor of the same conductivity type as that of the main electrode regions of said photoelectric converting cells.
Claim 2
Dependent Claim 190 words
A photoelectric converting device comprising a plurality of photoelectric converting cells which are arranged and each of which has: a semiconductor transistor consisting of two main electrode regions formed of a semiconductor of one conductivity type and a control electrode region formed of a semiconductor of the opposite conductivity type; and a capacitor for controlling a potential of said control electrode region in a floating state. wherein each of said photoelectric converting cells performs at least the operations to accumulate carriers generated due to an incident light into said control electrode region and read out an accumulated voltage generated due to said accumulated carriers by controlling the potential of said control electrode region in the floating state through said capacitor, an isolating region for electrically isolating said adjacent photoelectric converting cells is constituted by an insulating region formed on the basis of a concave portion formed due to an etching and a semiconductor region having a high concentration formed under said insulating region, and said high concentration semiconductor region consists of a semiconductor of the same conductivity type as that of the main electrode regions of said photoelectric converting cells.
Claim 3
Dependent Claim 22 words
A photoelectric converting device according to claim 1, wherein said insulating region consists of an insulating material filled in said concave portion.
Claim 4
Dependent Claim 31 words
A photoelectric converting device according to claim 1, wherein said insulating region consists of an insulating film formed along said concave portion and a conductive material surrounded by said insulating film.

References Cited (Backward Citations)

DE3326924A1 Cited
EP0132076A1 Cited

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