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EP0195152A1
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Process of forming a compound semiconductive material
Assignee: Siemens Solar Industries LP
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Filing: 1985-03-22
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Granted: —
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Expires: 2005-03-22
Abstract
Abstract A process of forming a compound semiconductive material having a plurality of constituent elements comprising electro-depositing a plurality of such constituent elements and subsequently heating the deposits to produce the desired semiconductive material.
Inventors
- 👤 Vijay K. Kapur
- 👤 Uppala V. Choudary
- 👤 Alan K.P. Chu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 15:10
CPC Classifications
C; C23; C23C; C23C26/00; H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/169; H10F71/00; H10F71/125; H10F71/1253; H10F71/127; H10F71/1272; H10F71/135; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/265; H10P14/32; H10P14/3202; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3436; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
53 words
A process cf forming a compound semiconductive material having a plurality of constituent elements, comprising: electrodepositing at least one of the constituent elements on a substrate; separately electrodepositing at least one other constituent element an or with the first electrodeposited constituent element elements; and heating said deposited elements tc produce said semiconductive material.
Claim 2
Dependent Claim
53 words
A process cf forming a compound semiconductive material having a plurality of constituent elements, comprising: electrodepositing at least one of the constituent elements on a substrate; separately electrodepositing at least one other constituent element an or with the first electrodeposited constituent element elements; and heating said deposited elements tc produce said semiconductive material.
Claim 3
Dependent Claim
54 words
The process of Claim 1 wherein: a first film is deposited to consist essentially of at least one constituent element; a second film is deposited to consist essentially of at least one other constituent element; and said semiconductive material is produced by interdiffusion and chemical reaction of said constituent elements during said heating step.
Claim 4
Dependent Claim
12 words
The process of Claim 1 wherein: said constituent elements are electrodeposited sequentially.
Claim 5
Dependent Claim
13 words
The process of Claim I wherein: said constituent elements are electrodeposited essentially simultaneously.
Claim 6
Dependent Claim
34 words
The process of Claim 1 wherein: said constituent elements are chosen from the chemical groups IIB and VIA, and the semiconductive material formed is at least in part a compound of the formula (IIB)(VIA).
Claim 7
Dependent Claim
33 words
The process of Claim 5 wherein: said IIB elements are selected from the group of zn and Cd, and said VIA elements are selected from the group of S , Se, and Te.
Claim 8
Dependent Claim
24 words
The process of Claim 6 wherein: said constituent elements are Cd and Te, and the semiconductive material formed is at least in part CdTe.
Claim 9
Dependent Claim
34 words
The process of Claim 1 wherein: said constituent elements are chosen from the chemical groups IIIA and VA, and the semiconductive material formed is at least in part a compound of the formula (IIIA)(VA).
Claim 10
Dependent Claim
32 words
The process of Claim 8 wherein: said IIIA elements are selected from the group B, Al, Ga, and In; and said VA elements are selected from the group P, As, and Sb.
Claim 11
Dependent Claim
24 words
The process of Claim9 wherein: said constituent elements are Ga and As, and the sexi- conductive material formed is at least in part GaAs.
Claim 12
Dependent Claim
25 words
The process of Claim 1 which further comprises the step of: electrodepositing a third constituent element of the semiconductive material prior to said heating step.
Claim 13
Dependent Claim
37 words
The process of Claim 11 wherein: said constituent elements are chosen from the chemical groups IB, IIIA, and VIA, and the semiconductive material formed is at least in part a compound of the formula (IB)(IIIA)(VIA) 2 .
Claim 14
Dependent Claim
46 words
The process of Claim 12 wherein: said 13 elements are selected from the grou of CU and Ag; said IIIA elements are selected from the group of 5, A1, Ga, and In; and said VIA elements are selected from the group of S, Se, and Te..
Claim 15
Dependent Claim
28 words
The process of Claim 12 wherein: said constituent elements are Cu, In and Se, respectively; and the semiconductive material formed is at Least in part CuInSe 2 .
Claim 16
Dependent Claim
37 words
The process of Claim 11 wherein: said constituent elements are chosen from the chemical groups IIB, IVA and VA, and the semiconductive material formed is at least in part a compound of the formula (IIE)(IVA)(VA) 2 .
Claim 17
Dependent Claim
44 words
The process of Claim 15 wherein: said IIB elements are selected from the group Zn and Cd; said IVA elements are selected from the croup C, Si, Ge, and Sn; and said VA elements are selected from the croup P, As, Sb, and Bi.
Claim 18
Dependent Claim
28 words
The process of Claim 15 wherein: said constituent elements are Zn, Sn and P, respectively; and the semiconductive material formed is at least in part ZnSnP 2 .
Claim 19
Dependent Claim
27 words
The process of Claim 1 wherein: said heating step comprises heating the deposited elements in a reactive atmosphere containing a further constituent element of the semiconductive material.
Claim 20
Dependent Claim
37 words
The process of Claim 18 wherein: said constituent elements are chosen from the chemical groups IB, IIIA and VIA, and the semiconductive material formed is at least in part a compound of the formula (IB)(IIIA)(VIA 2 ).
Claim 21
Dependent Claim
43 words
The process of Claim 19 wherein: said IB elements are selected from the group Cu and Ag; said IIIA elements are selected from the group by A1, Ga and In; and said VIA elements are selected from the group S, Se, and Te.
Claim 22
Dependent Claim
34 words
The process of Claim 19 wherein: said semiconductive material is essentially CuInSe 2 ; said deposited films consist essentially of Cu and In, respectively; and the reactive atmosphere contains Se as its reactive constituent.
Claim 23
Dependent Claim
37 words
The process of Claim 18 wherein: said constituent elements are chosen from the chemical groups IIB, IVA, and VA, and the semiconductive material formed is at least in part a compound of the formula (IIB)(IVA)(VA) 2 .
Claim 24
Dependent Claim
44 words
The process of Claim 22 wherein: said IIB elements are selected from the group Zn and Cd; said IVA elements are selected from the group C, Si, Ge, and Sn; and said VA elements are selected from the croup P, As, Sb, and Bi.
Claim 25
Dependent Claim
32 words
The process of Claim 23 wherein: said semiconductive materiaL is essentially ZnSnP 2 : the deposited films contain Zn and sn, respectively, and the reactive atmosphere contains P as its reactive cconstituent.
Claim 26
Dependent Claim
34 words
The process of Claim 1 wherein: said heating step is carried out in one of an inert atmosphere or a reactive atmosphere which contains further constituent element of the semiconductive material to be produced.
Claim 27
Dependent Claim
39 words
The process of Claim 1 wherein: said electrodeposition steps are carried cut at an electrical current density of from about 1 to about 300 milliames per square centimeter and in an electrolyte which is nondelete- rious to said substrate.
Claim 28
Dependent Claim
43 words
The method of Claim 1 wherein: said electrodeposition steps are carried cut at essentially atmospheric pressure and employing one of an aqueous electrolyte at a temperature not greater than about 90°C. or a nonaqueous electrolyte at a temperature not greater than about 500°C.
Claim 29
Dependent Claim
38 words
The method of Claim 1-wherein: said heating step is carried out at essentially atmospheric pressure and a temperature from about 150 to about 500°C. for a time sufficient to form a finite amount of the desired semiconductive material.
References Cited (Backward Citations)
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