Abstract A method of manufacturing a semiconductor device has .the steps of forming an insulating film (23) on a semiconductor substrate (21), forming a polycrystalline silicon layer (24) on the insulating film (23), converting either all of the polycrystalline silicon layer (24) or a portion of predetermined thickness of the polycrystalline silicon layer (24) into an amorphous silicon layer (25), patterning the polycrystalline silicon layer (24), either all of which or a portion of predetermined thickness of which has been converted into an amorphous silicon layer (25), and ion-implanting an impurity in the semiconductor substrate (21) using the patterned layer (26) as a mask.
A method of manufacturing a semiconductor device, comprising the steps of: forming an insulating film (23) on a semiconductor substrate (21); forming a polycrystalline silicon layer on said insulating film (26); converting all of said polycrystalline silicon layer (24) or a portion of said polycrystalline silicon layer, whose thickness is predetermined, into an amorphous silicon layer (25); patterning said polycrystalline silicon layer (24), either all of which or a portion of which, whose thickness is predetermined, has been converted into an amorphous silicon layer (25); and ion-implanting an impurity in said semiconductor substrate using said patterned layer (26) as a mask.
Claim 2
Independent Claim
101 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an insulating film (23) on a semiconductor substrate (21); forming a polycrystalline silicon layer on said insulating film (26); converting all of said polycrystalline silicon layer (24) or a portion of said polycrystalline silicon layer, whose thickness is predetermined, into an amorphous silicon layer (25); patterning said polycrystalline silicon layer (24), either all of which or a portion of which, whose thickness is predetermined, has been converted into an amorphous silicon layer (25); and ion-implanting an impurity in said semiconductor substrate using said patterned layer (26) as a mask.
Claim 3
Dependent Claim
25 words
A method according to claim 1, characterized in that said converting step comprises a step of performing ion implantation in said polycrystalline silicon layer (24).
Claim 4
Dependent Claim
25 words
A method according to claim 2, characterized in that the ion to be ion-implanted has a large atomic radius and is of an n-conductivity type.
Claim 5
Dependent Claim
30 words
A method according to claim 2, characterized in that the ion to be ion-implanted is an ion selected from the group consisting of silicon, fluorine, phosphorus, argon, and arsenic ions.
Claim 6
Dependent Claim
25 words
A method according to claim 1, characterized in that said portion whose thickness is predetermined is a surface portion of said polycrystalline silicon layer (24).
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