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EP0193117A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of manufacturing semiconductor device

Assignee: Toshiba Corp
•
Filing: 1986-02-20
•
Granted: —
•
Expires: 2006-02-20
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Abstract

Abstract A method of manufacturing a semiconductor device has .the steps of forming an insulating film (23) on a semiconductor substrate (21), forming a polycrystalline silicon layer (24) on the insulating film (23), converting either all of the polycrystalline silicon layer (24) or a portion of predetermined thickness of the polycrystalline silicon layer (24) into an amorphous silicon layer (25), patterning the polycrystalline silicon layer (24), either all of which or a portion of predetermined thickness of which has been converted into an amorphous silicon layer (25), and ion-implanting an impurity in the semiconductor substrate (21) using the patterned layer (26) as a mask.

Inventors

  • 👤 Moriya C/O Patent Division Nakahara

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 06:33
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10P; H10P32/00; H10P32/30; H10P32/302; H10P76/00; H10P76/40; H10P76/403; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S148/00; Y10S148/061; Y10S148/082

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 101 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an insulating film (23) on a semiconductor substrate (21); forming a polycrystalline silicon layer on said insulating film (26); converting all of said polycrystalline silicon layer (24) or a portion of said polycrystalline silicon layer, whose thickness is predetermined, into an amorphous silicon layer (25); patterning said polycrystalline silicon layer (24), either all of which or a portion of which, whose thickness is predetermined, has been converted into an amorphous silicon layer (25); and ion-implanting an impurity in said semiconductor substrate using said patterned layer (26) as a mask.
Claim 2
Independent Claim 101 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an insulating film (23) on a semiconductor substrate (21); forming a polycrystalline silicon layer on said insulating film (26); converting all of said polycrystalline silicon layer (24) or a portion of said polycrystalline silicon layer, whose thickness is predetermined, into an amorphous silicon layer (25); patterning said polycrystalline silicon layer (24), either all of which or a portion of which, whose thickness is predetermined, has been converted into an amorphous silicon layer (25); and ion-implanting an impurity in said semiconductor substrate using said patterned layer (26) as a mask.
Claim 3
Dependent Claim 25 words
A method according to claim 1, characterized in that said converting step comprises a step of performing ion implantation in said polycrystalline silicon layer (24).
Claim 4
Dependent Claim 25 words
A method according to claim 2, characterized in that the ion to be ion-implanted has a large atomic radius and is of an n-conductivity type.
Claim 5
Dependent Claim 30 words
A method according to claim 2, characterized in that the ion to be ion-implanted is an ion selected from the group consisting of silicon, fluorine, phosphorus, argon, and arsenic ions.
Claim 6
Dependent Claim 25 words
A method according to claim 1, characterized in that said portion whose thickness is predetermined is a surface portion of said polycrystalline silicon layer (24).

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