Patent EP0191434A2 successfully refreshed from Google Patents.
EP0191434A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Improved solder connection between microelectronic chip and substrate and method of manufacture
Assignee: International Business Machines Corp
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Filing: 1986-02-07
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Granted: —
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Expires: 2006-02-07
Abstract
Abstract Microelectric chips (10) are electrically connected to underlying substrates (14) by means of elongated solder columns (26) made possible by solder dams at the surface of the substrate, the dams being positioned about at least a portion of the connection pads on the surface. Substantial increases in the size of the matrix of such columns are achieved without exceeding applicable shear strain limits, due to the increased deformation of the connectors made possible by their increased length.
Inventors
- 👤 Marybelle C. Blakeslee
- 👤 Dudley Augustus Chance
- 👤 Dean Eric Eastman
- 👤 John J. Gniewek
- 👤 Chung Wen Ho
- 👤 Ernest N. Levine
- 👤 Jose E. Ordonez
- 👤 Timothy Clark Reiley
- 👤 Eugene R. Skarvinko
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 18:43
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/685; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H05K3/3436; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K2201/00; H05K2201/09; H05K2201/09209; H05K2201/09372; H05K2201/09472; H05K2201/09481; H05K3/3452; H05K3/40; H05K3/4038; H05K3/4053; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/07251; H10W72/20; H10W72/251; H10W72/252; H10W90/00; H10W90/701; H10W90/721; H10W90/724; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
177 words
A method for providing controlled collapse connections between a microelectronic chip (10) having a surface including a matrix of electrical connection points and a support substrate (14) having a surface including a corresponding matrix of electrical connection points (16), the method comprising the steps of: forming, from an electrically insulating material, at at least a portion of the connection points on at least one of said surfaces, dam means defining a central open volume around each such connection point; introducing molten solder into each open volume defined by the dam means; allowing the solder to cool to form, at each of the connection points concerned, a solder column; positioning the chip and the substrate such that the respective matrices of connection points are in alignment; and heating the assembly thus formed to melt the solder columns and form said controlled collapse connections (26), the material of the dam means being such that, on subsequent cooling, the dam means and solder columns separate at least partially from each other so as to permit flexing of the solder columns.
Claim 2
Independent Claim
177 words
A method for providing controlled collapse connections between a microelectronic chip (10) having a surface including a matrix of electrical connection points and a support substrate (14) having a surface including a corresponding matrix of electrical connection points (16), the method comprising the steps of: forming, from an electrically insulating material, at at least a portion of the connection points on at least one of said surfaces, dam means defining a central open volume around each such connection point; introducing molten solder into each open volume defined by the dam means; allowing the solder to cool to form, at each of the connection points concerned, a solder column; positioning the chip and the substrate such that the respective matrices of connection points are in alignment; and heating the assembly thus formed to melt the solder columns and form said controlled collapse connections (26), the material of the dam means being such that, on subsequent cooling, the dam means and solder columns separate at least partially from each other so as to permit flexing of the solder columns.
Claim 3
Dependent Claim
61 words
A method as claimed in claim 1, in which the step of forming the dam means comprises: providing a layer of electrically insulating material on the respective surface; and providing through the layer a plurality of holes corresponding to the connection points on each surface to be dammed, to thereby define the central open volume (36) at each such connection point
Claim 4
Dependent Claim
36 words
A method as claimed in claim 2, in which the dam means are further defined by removing sections of the electrically insulating layer to leave an annular solder dam - (32) surrounding each said open volume.
Claim 5
Independent Claim
27 words
A method as claimed in any preceding claim in which the coefficient of thermal expansion of the damming material is about one fourth that of the solder.
Claim 6
Dependent Claim
20 words
A method as claimed in claim 2 or claim 4 in which the layer of electrically insulating material is ceramic.
Claim 7
Dependent Claim
23 words
A method as claimed in claim 5, in which the thickness of the damming layer is in the range 0.025 to 0.127 millimetres.
Claim 8
Dependent Claim
38 words
A method as claimed in claim 1, 2 or 3 in which the coefficient of thermal expansion of the damming material is substantially greater than that of the substrate or chip or both to which it is applied.
Claim 9
Dependent Claim
16 words
A method as claimed in claim 7, in which the damming material is a polyimide material.
Claim 10
Dependent Claim
26 words
A method as claimed in claim 7 or claim 8 in which the thickness of the damming layer is in the range 0.050 to 0.200 millimetres.
Claim 11
Independent Claim
22 words
A method as claimed in any preceding claim in which the dam means and solder columns are formed on the substrate (14).
References Cited (Backward Citations)
No citation records indexed.
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