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EP0187716A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor laser array device

Assignee: NEC Corp
•
Filing: 1986-01-08
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Granted: —
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Expires: 2006-01-08
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Abstract

Abstract The semiconductor laser array device is made up of closely adjacent writing and reading semiconductor lasers driven independently and including respective stripe shaped active layers (2 and 3). Cleaved facets at the front and rear ends of each active layer (2, 3) confront the front and rear surfaces (4 and 5) respectively of the device. The device further comprises first transparent dielectric films (6 and 9) formed over the entire front and rear surfaces (4 and 5) of the device, a metal film (7) having a high reflectivity and formed on the rear dielectric film (6) to cover the cleaved facet of the active layer (2) on the rear surface of the writing laser, and a further transparent dielectric film (8) formed on the entire rear surface of the semiconductor laser array device to enclose the metal film (7).

Inventors

  • 👤 Kenji C/O Nec Corporation Endo

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-27 20:07
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/12; G11B7/125; G11B7/127; H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/40; H01S5/4025; H01S5/4031; H01S5/20; H01S5/22; H01S5/227; H01S5/2275

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 127 words
A semiconductor laser array device comprising first and second closely adjacent semiconductor lasers formed from a plurality of semiconductor films and each including an active lasing layer (2, 3), common front and rear cleaved facets perpendicular to the active layers, and electrode means (10, 12) for feeding driving, current to each of the first and second lasers, characterised by first dielectric films (6 and 9) formed over the entire front and rear surfaces of the device, a metal film (7) having a high reflectivity formed on the rear first dielectric film (6) to cover the cleaved facet of the active layer (2) of the first laser, and a second dielectric layer (8) formed on the entire rear surface of the device to enclose the metal film (7).
Claim 2
Dependent Claim 127 words
A semiconductor laser array device comprising first and second closely adjacent semiconductor lasers formed from a plurality of semiconductor films and each including an active lasing layer (2, 3), common front and rear cleaved facets perpendicular to the active layers, and electrode means (10, 12) for feeding driving, current to each of the first and second lasers, characterised by first dielectric films (6 and 9) formed over the entire front and rear surfaces of the device, a metal film (7) having a high reflectivity formed on the rear first dielectric film (6) to cover the cleaved facet of the active layer (2) of the first laser, and a second dielectric layer (8) formed on the entire rear surface of the device to enclose the metal film (7).
Claim 3
Dependent Claim 37 words
A semiconductor laser array device according to claim 1, characterised in that the first and second dielectric films (6, 9, 8) are formed by sputtering and the metal film (7) is formed by a vacuum deposition method.
Claim 4
Dependent Claim 22 words
A semiconductor laser array device according to claim 1 or 2, characterised in that the lasers are buried coarctate mesa-structured ACGaAs lasers.

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