Patent EP0187596A2 successfully refreshed from Google Patents.
EP0187596A2
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EP
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Semiconductor memory device and method for producing the same
Assignee: Fujitsu Ltd
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Filing: 1985-12-20
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Granted: —
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Expires: 2005-12-20
Abstract
Abstract A semiconductor memory device including a semiconductor substrate (1) comprising a field oxide layer (10) selectively formed on the semiconductor substrate, a capacitor including a insulating layer (7) formed on the surface of a trench (6) formed in such a manner that at least an edge portion of the field oxide layer is removed, a conductive layer (8) formed on the insulating layer (7), a dielectric layer (9) formed on the conductive layer (8) and an electrode (11) formed on the dielectric layer (9).
Inventors
- 👤 Masao Taguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 17:16
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/30; H10B12/37; H10B12/0387
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
66 words
A semiconductor memory device comprising: a semiconductor substrate; a field oxide layer selectively formed on the semiconductor substrate; a capacitor including an insulating layer formed on the surface of a trench formed in such a manner that at least an edge portion of the field oxide layer is removed, a conductive layer formed on the insulating layer and a dielectric layer formed on the conductive layer.
Claim 2
Dependent Claim
66 words
A semiconductor memory device comprising: a semiconductor substrate; a field oxide layer selectively formed on the semiconductor substrate; a capacitor including an insulating layer formed on the surface of a trench formed in such a manner that at least an edge portion of the field oxide layer is removed, a conductive layer formed on the insulating layer and a dielectric layer formed on the conductive layer.
Claim 3
Dependent Claim
22 words
A semiconductor memory device according to claim 1, wherein said edge portion of the field oxide layer is a bird's beak portion.
Claim 4
Dependent Claim
27 words
A semiconductor memory device according to claim 1, wherein said conductive layer has no extended portion on the surface of the semiconductor substrate between closely positioned trenches.
Claim 5
Independent Claim
86 words
A method for producing a semiconductor memory device comprising the steps of: selectively forming a field oxide layer on a surface of a semiconductor substrate; forming a trench in such a manner that at least an edge portion of the field oxide layer is removed; forming an insulating layer on the surface of the trench; forming, in the trench, a capacitor including a conductive layer formed on the insulating layer, a dielectric layer formed on the conductive layer and an electrode formed on the dielectric layer.
Claim 6
Independent Claim
86 words
A method for producing a semiconductor memory device comprising the steps of: selectively forming a field oxide layer on a surface of a semiconductor substrate; forming a trench in such a manner that at least an edge portion of the field oxide layer is removed; forming an insulating layer on the surface of the trench; forming, in the trench, a capacitor including a conductive layer formed on the insulating layer, a dielectric layer formed on the conductive layer and an electrode formed on the dielectric layer.
Claim 7
Dependent Claim
25 words
A method for producing a semiconductor memory device according to claim 4, wherein said edge portion of the field oxide layer is a bird's beak.
References Cited (Backward Citations)
No citation records indexed.
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