Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
75 words
A method for the production of polycrystalline silicon, comprising: heating a deposition substrate (10) in a reaction vessel (11) of metal, bringing a gaseous silicon hydride close to the substrate, decomposing the silicon hydride, and producing a deposit of silicon on the substrate, while the wall of the vessel is maintained at a temperature of from 100 to 450 o C which is from 100 to 7000C lower than the temperature of the heated substrate.
Claim 2
Independent Claim
75 words
A method for the production of polycrystalline silicon, comprising: heating a deposition substrate (10) in a reaction vessel (11) of metal, bringing a gaseous silicon hydride close to the substrate, decomposing the silicon hydride, and producing a deposit of silicon on the substrate, while the wall of the vessel is maintained at a temperature of from 100 to 450 o C which is from 100 to 7000C lower than the temperature of the heated substrate.
Claim 3
Dependent Claim
19 words
A method according to Claim 1, in which the wall is maintained at a temperature of at least 300°C.
Claim 4
Dependent Claim
31 words
A method according to Claim 1 or Claim 2, in which the temperature of the wall is from 300 and 500 o C lower than the temperature of the heated substrate.
Claim 5
Independent Claim
19 words
A Method according to any one of Claims 1, 2 or 3, in which the silicon hydride comprises monosilane.
Claim 6
Independent Claim
19 words
A method according to any one of Claims 1, 2 or 3, in which the silicon hydride comprises disilane.
Claim 7
Independent Claim
114 words
An apparatus for the production of polycrystalline silicon, comrpsing: a reaction vessel (1) of a metallic material which is closed with a detachable lid (5), an inlet (11) and an outlet (14) for gas which are connected to the vessel, a jacket (2) which is arranged over the substantial part of the vessel to provide an interspace between the jacket and the vessel, a closed circuit for a gas comprising a part of the interspace, a two-way temperature controlling means (3) for heating and cooling the gas which is provided in the circuit, and a deposition substrate (10) of electrically conductive material which is disposed within the vessel and extends axially from the lid.
Claim 8
Independent Claim
114 words
An apparatus for the production of polycrystalline silicon, comrpsing: a reaction vessel (1) of a metallic material which is closed with a detachable lid (5), an inlet (11) and an outlet (14) for gas which are connected to the vessel, a jacket (2) which is arranged over the substantial part of the vessel to provide an interspace between the jacket and the vessel, a closed circuit for a gas comprising a part of the interspace, a two-way temperature controlling means (3) for heating and cooling the gas which is provided in the circuit, and a deposition substrate (10) of electrically conductive material which is disposed within the vessel and extends axially from the lid.
Claim 9
Dependent Claim
46 words
An apparatus according to Claim 6, in which the deposition substrate comprises a plurality of axially extending portions, an adjacent pair of the axially extending portions being separated by a hollow partition (20) with an inner cavity which is in communication with the-temperature controlling means. -