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EP0178801A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor device with imaginary base region

Assignee: Sony Corp
•
Filing: 1985-09-19
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Granted: —
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Expires: 2005-09-19
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Abstract

Abstract A semiconductor device includes a semiconductor substrate (11) having a semi-insulating property, a first region (12) of one conductivity-type which will become an emitter region, a second region (13) of the one conductivity-type which will become a collector region, the first and second regions (12, 13) being formed on the substrate (11) with a predetermined spacing therebetween, and a third region (14) of another conductity-type formed on the substrate (11) between the first and second regions (12,13). A forward biasing voltage is applied between the third and first regions (14,12) thereby to form an imaginary base region (19) in the substrate (11) beneath the third region (14) by majority carriers implanted or injected from the third region (14), whereby the semiconductor device carries out a bipolar transistor operation, and at least one of the first and third regions (12,14) consists of a plurality of regions.

Inventors

  • 👤 Yoji C/O Patents Division Kato
  • 👤 Seiichi C/O Patents Division Watanabe
  • 👤 Masaru C/O Patents Division Wada

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 12:54
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/60; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D62/184

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 153 words
A semiconductor device comprising: a semiconductor substrate (11) having a semi-insulating property; a first region (12) of one conductivity-type which will become an emitter region; a second region (13) of said one conductivity-type which will become a collector reckon, said first and second regions (12, 13) being formed on said substrate (11) with a predetermined spacing therebetween; a third region (14) of another conductivity-type formed on said substrate (11) between said first and second regions (12, 13); and means for applying a forward biasing voltage between said third and first regions (14, 12) to form an imaginary base region (19) in said substrate (11) beneath said third region (14) by majority carriers implanted or injected from said third region (14), whereby said semiconductor device can operate as a bipolar transistor; characterised in that: at least one of said first and said third regions (12, 14) consists of a plurality of re gi ons.
Claim 2
Dependent Claim 153 words
A semiconductor device comprising: a semiconductor substrate (11) having a semi-insulating property; a first region (12) of one conductivity-type which will become an emitter region; a second region (13) of said one conductivity-type which will become a collector reckon, said first and second regions (12, 13) being formed on said substrate (11) with a predetermined spacing therebetween; a third region (14) of another conductivity-type formed on said substrate (11) between said first and second regions (12, 13); and means for applying a forward biasing voltage between said third and first regions (14, 12) to form an imaginary base region (19) in said substrate (11) beneath said third region (14) by majority carriers implanted or injected from said third region (14), whereby said semiconductor device can operate as a bipolar transistor; characterised in that: at least one of said first and said third regions (12, 14) consists of a plurality of re gi ons.
Claim 3
Dependent Claim 40 words
A semiconductor device according to claim 1 wherein said first region (12) is circular, a plurality of discrete said third regions (14) encircle said first region (12), and said second region (13) surrounds said first and third regions (12, 14).
Claim 4
Dependent Claim 50 words
A semiconductor device according to claim 1 wherein said first and second regions (12, 13) are each comb-shaped comprising parallel-extending elongated teeth portions (12a, 13a) in over-lapping alternating relation, and a respective discrete elongated said third region (14) is disposed between each adjacent pair of said teeth portions (12a, 13a).

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