Patent EP0178170A2 successfully refreshed from Google Patents.
EP0178170A2
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Semiconductor device having a bonding wire and method for manufacturing it
Assignee: Toshiba Corp
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Filing: 1985-10-09
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Granted: —
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Expires: 2005-10-09
Abstract
Abstract A semiconductor device in which an end of an aluminium bonding wire (23) is connected to a lead electrode (25) of copper or a copper alloy in a manner such that the thickness of a reaction layer (60) is 0.2 (micron) or more. In manufacture, heat treatment is effected to bring the reaction layer (60) to the desired thickness. The semiconductor device displays excellent electrical characteristics in high temperature conditions or in high temperature high humidity conditions.
Inventors
- 👤 Hiroyuki C/O Patent Division Baba
- 👤 Takashi C/O Patent Division Matsuzaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 17:40
CPC Classifications
B; B23; B23K; B23K20/00; B23K20/22; B23K20/233; B23K20/2333; H; H10; H10W; H10W70/00; H10W70/01; H10W70/04; H10W70/041; H10W70/40; H10W72/00; H10W72/50; H10W72/01; H10W72/015; H10W72/01551; H10W72/071; H10W72/0711; H10W72/07141; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/07535; H10W72/07541; H10W72/531; H10W72/5363; H10W72/551; H10W72/552; H10W72/5524; H10W72/5525; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756; Y; Y10; Y10S; Y10S228/00; Y10S228/904; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
144 words
A semiconductor device (30) comprising a semiconductor element (22) mounted on a prescribed region of a lead frame (20) of copper or a copper alloy, a lead electrode (25) mounted or formed on said lead frame (20), a bonding wire (23) which has one end connected to a bonding pad (24) of said semiconductor element (22) and has its other end connected to said lead electrode (25), and a resin sealing body (27) which seals said semiconductor element (22), said bonding pad (24) and said bonding wire (23) in a manner such that a portion of said lead frame (20) and a portion of said lead electrode (25) lead out to the exterior, characterised in that said bonding wire (23) is of aluminium and the thickness of the reaction layer (60) at the connection with said lead electrode (25) is 0.2 (micron) or more.
Claim 2
Dependent Claim
144 words
A semiconductor device (30) comprising a semiconductor element (22) mounted on a prescribed region of a lead frame (20) of copper or a copper alloy, a lead electrode (25) mounted or formed on said lead frame (20), a bonding wire (23) which has one end connected to a bonding pad (24) of said semiconductor element (22) and has its other end connected to said lead electrode (25), and a resin sealing body (27) which seals said semiconductor element (22), said bonding pad (24) and said bonding wire (23) in a manner such that a portion of said lead frame (20) and a portion of said lead electrode (25) lead out to the exterior, characterised in that said bonding wire (23) is of aluminium and the thickness of the reaction layer (60) at the connection with said lead electrode (25) is 0.2 (micron) or more.
Claim 3
Independent Claim
117 words
A method of manufacturing a semiconductor device (30) comprising a step wherein one end of bonding wire (23) is connected to a bonding pad (24) of a semiconductor element (22) mounted on a lead frame (20) of copper or a copper alloy and its other end is connected to a lead electrode (25) of said lead frame (20), characterised in that said bonding wire (23) is of aluminium and said other end of the bonding wire (23) is fused to said bonding pad (24) and in that heat treatment of the fusion connection is effected to make the thickness of the reaction layer (60) formed by said copper or copper alloy and aluminium 0.2 (micron) or more.
Claim 4
Independent Claim
117 words
A method of manufacturing a semiconductor device (30) comprising a step wherein one end of bonding wire (23) is connected to a bonding pad (24) of a semiconductor element (22) mounted on a lead frame (20) of copper or a copper alloy and its other end is connected to a lead electrode (25) of said lead frame (20), characterised in that said bonding wire (23) is of aluminium and said other end of the bonding wire (23) is fused to said bonding pad (24) and in that heat treatment of the fusion connection is effected to make the thickness of the reaction layer (60) formed by said copper or copper alloy and aluminium 0.2 (micron) or more.
Claim 5
Dependent Claim
27 words
A method according to claim 2, characterised in that said heat treatment consists of heating effected with said lead electrode (25) held between heater elements (40, 42).
Claim 6
Dependent Claim
24 words
A method according to claim 3, characterised in that holding by said heaters (40, 42) is effected intermittently or continuously for a set time.
Claim 7
Dependent Claim
31 words
A method according to claim 3 or claim 4, characterised in that non-oxidizing gas is blown onto said lead frame (20) from below during heating by said heater elements (40, 42).
Claim 8
Dependent Claim
21 words
A method according to claim 2, characterised in that said heat treatment consists of heating by passage through a hydrogen oven.
Claim 9
Dependent Claim
29 words
A method according to claim 2, characterised in that heat treatment is effected by heating said lead electrode (25) apart from said bonding portion (26) with a burner torch.
Claim 10
Dependent Claim
24 words
A method according to claim 2, characterised in that said heat treatment consists of heating said lead electrode (25) by a resistance heating system.
Claim 11
Dependent Claim
22 words
A method according to claim 2, characterised in that said heat treatment consists of heating said bonding portion (26) by laser irradiation.
Claim 12
Dependent Claim
17 words
A method according to claim 5, characterised in that said non-oxidizing gas is inert and/or reducing gas.
Claim 13
Dependent Claim
24 words
A method according to claim 11, characterised in that said inert gas is nitrogen, argon or helium and said reducing gas is a hydrogen.
References Cited (Backward Citations)
No citation records indexed.
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