Patent EP0177903A2 successfully refreshed from Google Patents.
EP0177903A2
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Semiconductor device having a gallium arsenide crystal layer grown on a silicon substrate and method for producing it
Assignee: Daido Steel Co Ltd
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Filing: 1985-10-03
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Granted: —
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Expires: 2005-10-03
Abstract
Abstract A GaAs semiconductor device comprises a Si substrate (1), an intermediate layer (3, 4) formed on the substrate and a GaAs layer (2) grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AIP and AIGaP thin films.
Inventors
- 👤 Masayoshi Umeno
- 👤 Shiro Sakai
- 👤 Tetsuo Soga
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 17:48
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/149
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
50 words
A semiconductor device including a Si substrate (1), an intermediate layer formed on said substrate and having constituent superlattice layers (3, 4) and a GaAs layer (2) grown on said intermediate layer, said intermediate layer being provided to absorb the lattice mismatching between said Si substrate and said GaAs layer.
Claim 2
Dependent Claim
50 words
A semiconductor device including a Si substrate (1), an intermediate layer formed on said substrate and having constituent superlattice layers (3, 4) and a GaAs layer (2) grown on said intermediate layer, said intermediate layer being provided to absorb the lattice mismatching between said Si substrate and said GaAs layer.
Claim 3
Dependent Claim
42 words
A semiconductor device as set forth in claim 1 wherein said intermediate layer includes an arbitrary number of GaP/GaAsP superlattice layers (3), formed on said Si substrate (1) and an arbitrary number of GaAsP/GaAs (4) superlattice layers formed on said GaP/GaAsP layers.
Claim 4
Dependent Claim
63 words
A semiconductor device as set forth in claim 1 wherein said intermediate layer includes an AlP thin film (5) formed on said Si substrate (1), an AIGa P (6) thin film formed on said AlP film, an arbitrary number of GaP/GaAsP superlattice layers (3) formed on said AlGaP film and an arbitrary number of GaAsP/GaAs superlattice layers (4) formed on said GaP/GaAsP layers.
Claim 5
Independent Claim
44 words
A method of producing a semiconductor device having a GaAs layer on a Si substrate including a process of providing an intermediate layer between said substrate and said GaAs layer in order to absorb the lattice mismatching between said substrate and said GaAs layer.
Claim 6
Independent Claim
44 words
A method of producing a semiconductor device having a GaAs layer on a Si substrate including a process of providing an intermediate layer between said substrate and said GaAs layer in order to absorb the lattice mismatching between said substrate and said GaAs layer.
References Cited (Backward Citations)
No citation records indexed.
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