Patent EP0174743A2 successfully refreshed from Google Patents.
EP0174743A2
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Process for transition metal nitrides thin film deposition
Assignee: ATK Launch Systems LLC
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Filing: 1985-08-13
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Granted: —
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Expires: 2005-08-13
Abstract
Abstract Chemical vapour deposition process for depositing a transition metal nitride coating on a substrate. The coating has utility as a conductor in a microelectronic device. The transition metal source material for the process is a transition metal azide or aliphatic amine, optionally halogenated, which is a liquid at bubbler temperature. The compound is transported to a deposition chamber containing a substrate; in one embodiment transport is effected by a carrier gas comprising a mixture of hydrogen with hydrazine vapour or nitrogen. The deposition chamber containing the substrate is maintained under pyrolytic conditions to decompose the transition metal compound source material and to form a transition metal nitride on the substrate.
Inventors
- 👤 Andreas A. Melas
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 18:48
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; H; H10; H10D; H10D64/00; H10D64/60; H10D64/62; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H10D64/01; H10D64/011; H10D64/0116; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
106 words
A process for depositing a coating of a selected transition metal nitride on a substrate, comprising the steps of: A. placing a substrate within a deposition chamber; B. selecting a transition metal nitride for deposition on said substrate; C. providing a transition metal compound having the formula: wherein M is the selected transition metal; each R is selected from the group consisting of azide, halogen and: wherein R 1 and R 2 are selected from the group consisting of hydrogen, lower alkyl, cyclopentadienyi, and alkyl substituted cyclopentadienyi; at least one said R is not halogen; and x is an integer between 2 and 6 inclusive; and
Claim 2
Dependent Claim
106 words
A process for depositing a coating of a selected transition metal nitride on a substrate, comprising the steps of: A. placing a substrate within a deposition chamber; B. selecting a transition metal nitride for deposition on said substrate; C. providing a transition metal compound having the formula: wherein M is the selected transition metal; each R is selected from the group consisting of azide, halogen and: wherein R 1 and R 2 are selected from the group consisting of hydrogen, lower alkyl, cyclopentadienyi, and alkyl substituted cyclopentadienyi; at least one said R is not halogen; and x is an integer between 2 and 6 inclusive; and
Claim 3
Dependent Claim
32 words
D. introducing said transition metal compound into said deposition chamber while maintaining pyrolytic, nitride- forming conditions for said compound within said deposition chamber, thereby depositing said transition metal nitnde on said substrate.
Claim 4
Dependent Claim
32 words
D. introducing said transition metal compound into said deposition chamber while maintaining pyrolytic, nitride- forming conditions for said compound within said deposition chamber, thereby depositing said transition metal nitnde on said substrate.
Claim 5
Dependent Claim
33 words
The process of claim 1, wherein said pyrolytic conditions include a temperature of from 400°C to 800°C and a partial pressure of said transition metal compound of from 0.2 torrs to 100 torrs.
Claim 6
Dependent Claim
45 words
The process of claim 1 or claim 2, wherein said introducing step is practiced by maintaining said transition metal compound in a liquid state, entraining said transition metal compound on a carrier gas, and transporting said entrained compound and carrier gas into said deposition chamber.
Claim 7
Dependent Claim
19 words
The process of claim 3, wherein said transition metal compound is entrained on said carrier gas in a bubbler.
Claim 8
Dependent Claim
20 words
The process of claim 3 or claim 4 , wherein said carrier gas comprises a mixture of Hydrogen and Nitrogen.
Claim 9
Dependent Claim
21 words
The process of claim 3 o r cam 4 , wherein said carrier gas comprises a mixture of Hydrogen and hydrazine.
Claim 10
Dependent Claim
14 words
The process of any preceding claim, wherein said substrate is Silicon or Gallium arsenide.
Claim 11
Dependent Claim
22 words
The process of any preceding claim, wherein the deposition rate of said transition metal nitride is at least 10 angstroms per minute.
Claim 12
Dependent Claim
25 words
The process of any preceding claim, wherein M is selected from the group consisting of: Titanium, Niobium, Zirconium, Hafnium, Tantalum, Molybdenum, Tungsten, Chromium and Vanadium.
Claim 13
Dependent Claim
23 words
The process of claim 9, wherein said compound MRx is selected from the group consisting of: tetrakis- dimethylaminotitanium, tetrakisdiethylaminotitanium, tetrakis- dimethylaminozirconium and tetrakisdiethylaminozirconium.
Claim 14
Dependent Claim
13 words
The process of claim 9, wherein said transition metal compound MRx is tetrakis(dimethyiamino)titanium.
References Cited (Backward Citations)
No citation records indexed.
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