Patent EP0171858A2 successfully refreshed from Google Patents.
EP0171858A2
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EP
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Method of making silicon carbide and coatings of silicon carbide on carbonaceous substrates
Assignee: Anic SpA
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Filing: 1985-08-08
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Granted: —
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Expires: 2005-08-08
Abstract
Abstract A process is disclosed for making silicon carbide by reacting silicon or a silicon precursor with a carbonaceous material in the presence of an inorganic fluoride.
Inventors
- 👤 Angel Sanjurjo
- 👤 Kenneth M. Sancier
- 👤 Ibrahim M. Allam
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 08:25
CPC Classifications
C; C01; C01B; C01B32/00; C01B32/90; C01B32/914; C01B32/956; C04; C04B; C04B41/00; C04B41/009; C01B32/921; C01B32/949; C01B32/963; C01B32/984; C04B35/00; C04B35/515; C04B35/56; C04B35/565; C04B35/573; C04B41/45; C04B41/50; C04B41/5053; C04B41/5057; C04B41/5059; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C01P; C01P2004/00; C01P2004/01; C01P2004/03; C01P2004/10; C01P2004/80
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
64 words
A process for the production of silicon carbide said process comprising: (a) forming a reaction mixture of which at elevated temperature will comprise a carbon source: a silicon source; and at least one inorganic fluoride salt; (b) heating said reaction mixture for a sufficient time at an elevated temperature to cause silicon carbide to form; and (c) recovering silicon carbide from the reaction mixture.
Claim 2
Dependent Claim
64 words
A process for the production of silicon carbide said process comprising: (a) forming a reaction mixture of which at elevated temperature will comprise a carbon source: a silicon source; and at least one inorganic fluoride salt; (b) heating said reaction mixture for a sufficient time at an elevated temperature to cause silicon carbide to form; and (c) recovering silicon carbide from the reaction mixture.
Claim 3
Dependent Claim
19 words
A process for the production of silicon carbide as defined in claim 1 wherein the carbonaceous substrate is graphite.
Claim 4
Dependent Claim
25 words
A process for the production of silicon carbide as defined in claim 1 wherein a coating of silicon carbide is formed on a carbonaceous substrate.
Claim 5
Dependent Claim
20 words
A process for the production of silicon carbide wherein a shaped carbonaceous substrate is substantially completed converted to silicon carbide.
Claim 6
Dependent Claim
20 words
A process for the production of silicon carbide wherein a shaped carbonaceous substrate is substantially completed converted to silicon carbide.
Claim 7
Dependent Claim
22 words
A process for the production of silicon carbide as defined in claims 3 or 4 wherein the silicon source is elemental silicon.
Claim 8
Dependent Claim
31 words
A process for the production of silicon carbide as defined in claim 5 wherein the inorganic fluoride is selected from the group consisting of sodium fluoride, potassium fluoride and lithium fluoride.
Claim 9
Dependent Claim
34 words
A process for the production of silicon carbide as defined in claim 5 wherein a temperature from the melting point of the inorganic fluoride or a eutectic containing a fluoride up to about 1600°C.
Claim 10
Dependent Claim
19 words
A process as defined in claim 7 wherein a temperature of from about 750°C to about 1300°C is utilized.
Claim 11
Dependent Claim
19 words
A process as defined in claim 7 wherein a temperature of from about ll10°C to about 1200°C is utilized.
Claim 12
Dependent Claim
14 words
A process as defined in claim 5 wherein the carbonaceous source is carbon fiber.
Claim 13
Dependent Claim
13 words
A process as defined in claim 5 wherein the carbon source is graphite.
Claim 14
Dependent Claim
15 words
A process as defined in claim 5 wherein the carbon source is a carbon sponge.
Claim 15
Dependent Claim
14 words
A process as defined in claim 5 wherein the carbon source is graphite felt.
Claim 16
Dependent Claim
14 words
A process as defined in claim 5 wherein the carbon source is graphite foil.
Claim 17
Dependent Claim
29 words
A process as defined in claims 1, 3, 4 or 5 where a transition metal, or a metal from the La series (4f) or Ac series (5f) is used.
Claim 18
Dependent Claim
18 words
A process as defined in claim 15 where a Ti source is used instead of the Si source.
Claim 19
Dependent Claim
18 words
A process as defined in claim 15 where a Zr source is used instead of the Si Source.
Claim 20
Dependent Claim
18 words
A process as defined in claim 15 where a W source is used instead of the Si source.
Claim 21
Dependent Claim
22 words
A process as defined in claims 1, 3, 4, or 5 where a B source is used instead of the Si source.
References Cited (Backward Citations)
No citation records indexed.
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