Patent EP0171241A2 successfully refreshed from Google Patents.
EP0171241A2
Expired / Lapsed
EP
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Method of depositing silicon films with reduced structural defects
Assignee: Unisys Corp
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Filing: 1985-07-26
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Granted: —
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Expires: 2005-07-26
Abstract
Abstract @ Silicon films in integrated circuits are mass produced with reduced structural defects by passing a reactant gas which contains silicon over a batch of wafers in a quartz chamber to deposit a silicon substance on both the wafers in a quartz chamber and the quartz walls of the chamber; repeating the passing step on other batches of wafers until the thickness of the silicon substance on the quartz walls exceeds a predetermined limit; directing a forceful stream of gas against the quartz walls to knock microscopic particles of the silicon substance therefrom; removing the knocked-off microscopic particles from the chamber; and continuing the passing and repeating steps with no intervening acid etch of the silicon substance on the quartz walls.
Inventors
- 👤 Casimir John Wonsowicz
- 👤 Glenn Ross Canfield
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 16:48
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4407; Y; Y10; Y10S; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
127 words
A method of mass producing defect-free films of a silicon substance on integrated circuit wafers in a quartz chamber including the steps of: passing a reactant gas which contains silicon over a batch of said wafers in said quartz chamber to deposit said silicon substance on both said wafers and the quartz walls of said chamber; repeating said passing step on other batches of wafers until the thickness of said silicon substance on said quartz walls exceeds a predetermined limit; directing a forceful stream of gas against said quartz walls to knock microscopic particles of said silicon substance therefrom; removing said knocked-off microscopic particles from said chamber; and continuing said passing and repeating steps with no intervening acid etch of said silicon substance on said quartz walls.
Claim 2
Independent Claim
127 words
A method of mass producing defect-free films of a silicon substance on integrated circuit wafers in a quartz chamber including the steps of: passing a reactant gas which contains silicon over a batch of said wafers in said quartz chamber to deposit said silicon substance on both said wafers and the quartz walls of said chamber; repeating said passing step on other batches of wafers until the thickness of said silicon substance on said quartz walls exceeds a predetermined limit; directing a forceful stream of gas against said quartz walls to knock microscopic particles of said silicon substance therefrom; removing said knocked-off microscopic particles from said chamber; and continuing said passing and repeating steps with no intervening acid etch of said silicon substance on said quartz walls.
Claim 3
Dependent Claim
30 words
A method according to claim 1 wherein said reactant gas is passed through said chamber for a total of at least 25 hours prior to said directing and removing steps.
Claim 4
Dependent Claim
25 words
A method according to claim 1 wherein said forceful stream of gas is directed against said walls at a pressure of 25 to 45 psi.
Claim 5
Dependent Claim
19 words
A method according to claim 1 wherein said forceful stream of gas is directed substantially perpendicular to said walls.
Claim 6
Dependent Claim
23 words
A method according to claim 1 wherein said reactant gas is passed over said wafers at a flow rate of less than 40cc/sec.
Claim 7
Dependent Claim
33 words
A method according to claim 1 wherein said particles are removed from said chamber by applying a vacuum near the region of said walls to which said forceful stream of gas is directed.
Claim 8
Dependent Claim
23 words
A method according to claim 1 wherein said substance that is deposited on said wafers and on said quartz walls is silicon nitride.
Claim 9
Dependent Claim
22 words
A method according to claim 1 wherein said substance that is deposited on said wafers and on said quartz walls is polysilicon.
Claim 10
Dependent Claim
36 words
A method according to claim 1 wherein said forceful stream of gas is emitted from an aperture that is formed by two spaced apart disks that are slightly smaller than the cross-sectional shape of said chamber.
Claim 11
Dependent Claim
47 words
A method according to claim 1 wherein said forceful stream of gas is emitted from a first aperture while a vacuum is applied to a second aperture which apertures are formed by three spaced apart disks that are slightly smaller than the cross-sectional shape of said chamber.
Claim 12
Independent Claim
103 words
A method of depositing silicon films on integrated circuit wafers in mass production with improved structural uniformity including the steps of: passing a gas which contains silicon over multiple batches of said wafers in a quartz chamber to deposit respective layers of silicon substance on said wafers while also building up a layer of said silicon substance on the internal quartz walls of said chamber; interrupting said passing step to direct a forceful stream of gas against said internal quartz walls to knock microscopic particles of said silicon substance therefrom; removing said knocked-off microscopic particles from said chamber; and continuing said passing step.
Claim 13
Independent Claim
103 words
A method of depositing silicon films on integrated circuit wafers in mass production with improved structural uniformity including the steps of: passing a gas which contains silicon over multiple batches of said wafers in a quartz chamber to deposit respective layers of silicon substance on said wafers while also building up a layer of said silicon substance on the internal quartz walls of said chamber; interrupting said passing step to direct a forceful stream of gas against said internal quartz walls to knock microscopic particles of said silicon substance therefrom; removing said knocked-off microscopic particles from said chamber; and continuing said passing step.
References Cited (Backward Citations)
No citation records indexed.
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