Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
41 words
A process for producing silicon carbide whisker by mixing a silicon source with carbon black and subjecting the resultant mixture to heating treatment in an inert atmosphere, which comprises using a silica recovered from geothermal hot water as said silicon source.
Claim 2
Dependent Claim
41 words
A process for producing silicon carbide whisker by mixing a silicon source with carbon black and subjecting the resultant mixture to heating treatment in an inert atmosphere, which comprises using a silica recovered from geothermal hot water as said silicon source.
Claim 3
Dependent Claim
32 words
The process for producing silicon carbide whisker according to Claim 1, wherein said geothermal hot water which springs out from a geothermal well has a silica content of 200 to 1000 ppm.
Claim 4
Dependent Claim
37 words
The process for producing silicon carbide whisker according to Claim 1, wherein said recovered silica is treated to have a particle size of 1 to 50 pm and a water content of 1 to 50 wt. %.
Claim 5
Dependent Claim
37 words
The process for producing silicon carbide whisker according to Claim 3, wherein said recovered silica is treated to have a particle size of 10 to 20 pm and a water content of 4 to 20 wt. %.
Claim 6
Dependent Claim
25 words
The process for producing silicon carbide whisker according to Claim 1, wherein said carbon black is selected from furnace black, acetylene black and lamp black.
Claim 7
Dependent Claim
18 words
The process for producing silicon carbide whisker according to Claim 5, wherein said carbon black is acetylene black.
Claim 8
Dependent Claim
30 words
The process for producing silicon carbide whisker according to Claim 1, wherein the mixing ratio of the recovered silica to carbon black is equal amounts in terms of volume ratio.
Claim 9
Dependent Claim
26 words
The process for producing silicon carbide whisker according to Claim 1, wherein argon or helium is used for the heat treatment in the inert gas atmosphere.
Claim 10
Dependent Claim
35 words
The process for producing silicon carbide whisker according to Claim 1, wherein the heat treatment is conducted at a temperature of 1300 to 1800 °C and for a treatment time of 1 to 4 hours.
Claim 11
Dependent Claim
34 words
The process for producing silicon carbide whisker according to Claim 9, wherein the heat treatment is conducted at a temperature of 1400 to 1600 °C for a treatment time of 2 to 3 hours.
Claim 12
Dependent Claim
21 words
The process for producing silicon carbide whisker according to Claim 1, wherein an electric furnace is used for the heat treatment.