Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
106 words
Integrated circuit isolation structure comprising a pattern of substantially vertically sided trenches within a semiconductor body, a first insulating layer (28, 30, 31) upon the sidewalls of said trenches, and an epitaxial layer (40) within said trenches, characterized by said epitaxial layer (40) extending from the base of said trenches and filling said trenches up to between about 0.3 to 4.0 micrometers from the upper surface of said trenches, a polycrystalline silicon layer (46) over said the upper surfaces of said epitaxial layer (40), and a second insulating layer (48) on the said polycrystalline silicon layer (46) which isolates said pattern of trenches from the ambient.
Claim 2
Dependent Claim
106 words
Integrated circuit isolation structure comprising a pattern of substantially vertically sided trenches within a semiconductor body, a first insulating layer (28, 30, 31) upon the sidewalls of said trenches, and an epitaxial layer (40) within said trenches, characterized by said epitaxial layer (40) extending from the base of said trenches and filling said trenches up to between about 0.3 to 4.0 micrometers from the upper surface of said trenches, a polycrystalline silicon layer (46) over said the upper surfaces of said epitaxial layer (40), and a second insulating layer (48) on the said polycrystalline silicon layer (46) which isolates said pattern of trenches from the ambient.
Claim 3
Dependent Claim
41 words
The integrated circuit isolation structure as claimed in claim 1, characterized in that a nucleating layer (44) is located upon said sidewalls in the area where said polycrystalline layer (46) over said upper surfaces of said epitaxial layer (40) is present.
Claim 4
Dependent Claim
33 words
The integrated circuit isolation structure as claimed in claim 1 or 2, characterized in that said first insulating layer is composed of a silicon dioxide layer (28) and a silicon nitride layer (30).
Claim 5
Dependent Claim
43 words
The integrated circuit isolation structure as claimed in one of the claims 1 to 3, characterized in that the depth of said trenches is between about 3 to 10 micrometers, and the width of said trenches is between about 1 to 10 micrometers.
Claim 6
Dependent Claim
28 words
The integrated circuit isolation structure as claimed in claims 1 to 4, characterized in that said second insulating layer (48) is composed of a thermally grown silicon dioxide.
Claim 7
Dependent Claim
89 words
Method for forming the integrated circuit isolation structure in a monocrystalline silicon body as claimed in claims 1 to 5, characterized by providing a substantially vertically sided pattern of trenches having an insulating layer sidewall and monocrystalline silicon bottom, epitaxially growing monocrystalline silicon (40) in said trenches from said monocrystalline silicon bottom, ending said monocrystalline growth between about 0.3 to 4.0 micrometers from the top of said trenches, and depositing polycrystalline silicon (46) over the surface containing said trench and in said trenches until the said trenches are filled.
Claim 8
Dependent Claim
48 words
The method as claimed in claim 2, characterized in that a layer of nucleating material (44) is formed on the surfaces of the said insulating layer sidewall in the region and the upper surfaces of the said epitaxial silicon (40) where said polycrystalline silicon is to be formed.
Claim 9
Dependent Claim
17 words
The method as claimed in claim 7, characterized in that said nucleating layer (44) is polycrystalline silicon.
Claim 10
Dependent Claim
27 words
The method as claimed in claim 6 wherein the said polycrystalline silicon (46) is deposited using the same deposition system used for said epitaxially growing silicon (40).
Claim 11
Independent Claim
24 words
The method as claimed in claims 6 to 9, characterized in that said polycrystalline silicon layer (46) is removed in areas above said trenches.
Claim 12
Independent Claim
35 words
The method as claimed in claims 6 to 10, characterized in that the upper surfaces of said polycrystalline silicon layer (46) in said trenches are thermally oxidized to form a silicon dioxide cap (48) thereon.