Patent EP0166112A2 successfully refreshed from Google Patents.
EP0166112A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device with bonding pads surrounded by source and/or drain regions
Assignee: Sony Corp
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Filing: 1985-04-26
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Granted: —
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Expires: 2005-04-26
Abstract
Abstract A semiconductor device, such as GaAs FET, hat low-noise, ultra-high frequency operation. The semiconductor device has at least one bonding pad (14) for applying potential to the gate electrode (11) lying outside or the source region (16). In practice, one or more bonding pads (14a to 14c) are deposited in the general vicinity of the gate electrode (11) and outside of the source region (16). This allows the number of supply points P (Pa to Pc) to be increased without lengthening the source region and thus expanding the chip. With regard to the drain-gate capacitance, the bonding pad or pads can be surrounded by an electrode other than the drain region electrode or the gate electrode to ensure that the drain-gate capacitance is not increased.
Inventors
- 👤 Tsuneyoshi Aoki
- 👤 Masayoshi Kanazawa
- 👤 Akiyasu Ishitani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 18:53
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/519; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10W; H10W72/00; H10W72/90; H10W72/071; H10W72/075; H10W72/931; H10W72/932; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
140 words
A semiconductor device comprising: a semiconductor substrate (10) having a source region (16) and a drain region (17) formed therein region and a drain region formed therein a gate electrode (11) formed on said substrate (10) a source electrode (11) formed on said substrate and electrically connected to said source region (16), said (12) source electrode being located at one side of said gate electrode (11) a drain electrode (13) formed on said substrate (10) and electrically connected to said drain region, (17) said drain electrode being located at the other side of said gate electrode and means for supplying a potential for said gate electode (11), said means including a gate pad (14a to 14c resp) connected to a feeding point (Pa to Pc, resp.) of said gate electrode, said gate pad lying outside of said source electrode (12).
Claim 2
Dependent Claim
140 words
A semiconductor device comprising: a semiconductor substrate (10) having a source region (16) and a drain region (17) formed therein region and a drain region formed therein a gate electrode (11) formed on said substrate (10) a source electrode (11) formed on said substrate and electrically connected to said source region (16), said (12) source electrode being located at one side of said gate electrode (11) a drain electrode (13) formed on said substrate (10) and electrically connected to said drain region, (17) said drain electrode being located at the other side of said gate electrode and means for supplying a potential for said gate electode (11), said means including a gate pad (14a to 14c resp) connected to a feeding point (Pa to Pc, resp.) of said gate electrode, said gate pad lying outside of said source electrode (12).
Claim 3
Dependent Claim
50 words
The semiconductor device as set forth in claim 1, wherein said means includes a plurality of gate (14a, 14b,14c) gate pads respectively connected to respectively corresponding feeding points / on said gate electrode, and at least one of said gate pads (14a, 14b) lying outside of said source electrode. (12)
Claim 4
Dependent Claim
55 words
The semiconductor device as set forth in claim 1, wherein said source electrode (12) defines a space for receiving said gate pad, (14a,14b) and said means includes at least one first gate pad lying within said space defined in said source electrode and at least one second gate (14c) pad lying outside of said space.
Claim 5
Dependent Claim
28 words
The semiconductor device as set forth in claim 3, wherein said second gate pad (14c) lies at said the other side with respect to said gate electrode (11).
Claim 6
Dependent Claim
26 words
The semiconductor device as set forth in claim (14c) 3, wherein said second gate pad lies at an extension of longitudinal axis of said gate electrode.
Claim 7
Dependent Claim
24 words
The semiconductor device as set forth in claim 1, which further comprises a shielding electrode sorrounding said gate pad and connected to the gound.
Claim 8
Dependent Claim
25 words
The semiconductor device as set forth in claim 3, which further comprises a shielding electrode sorrounding said second gate pad and connected to the gound.
Claim 9
Dependent Claim
23 words
The semiconductor device as set forth in claim 7, wherein said shielding electrode is electrically and directly connected to the substrate for grounding.
Claim 10
Dependent Claim
23 words
The semiconductor device as set forth in claim 7, whereom said shielding electrode is connected to said source electrode to be grounded therethrough.
Claim 11
Dependent Claim
123 words
A field effect transistor comprising: semiconductor substrate a gate electrode having a plurality of feeding points a source electrode arranged at first side of said gate electrode and defining essentially enclosed space therein a drain electrode arranged second side of said gate electrode, which second side is opposite of said first side with respect to said gate electrode and means for suppling a potential to said gate electrode through said feeding points, said means including a plurality of gate pads, each of which is connected the corresponding one of said feeding points, said gate pads comprises at least one first pad arranged within said enclosed space of said source electrode and at least one second gate pad arranged outside of said enclosed space.
Claim 12
Dependent Claim
123 words
A field effect transistor comprising: semiconductor substrate a gate electrode having a plurality of feeding points a source electrode arranged at first side of said gate electrode and defining essentially enclosed space therein a drain electrode arranged second side of said gate electrode, which second side is opposite of said first side with respect to said gate electrode and means for suppling a potential to said gate electrode through said feeding points, said means including a plurality of gate pads, each of which is connected the corresponding one of said feeding points, said gate pads comprises at least one first pad arranged within said enclosed space of said source electrode and at least one second gate pad arranged outside of said enclosed space.
Claim 13
Dependent Claim
21 words
The field effect transistor as set forth in claim 1, wherein said second gate pad is arranged at said second side.
Claim 14
Dependent Claim
28 words
The field effect transistor as set forth in claim 10, wherein said second gate pad is arranged essentially in alignment with the longitudinal axis of said gate electrode.
Claim 15
Dependent Claim
26 words
The field effect transistor as set forth in claim 10, which further comprises a shielding electrode sorrounding said second gate pad and connected to the ground.
Claim 16
Dependent Claim
24 words
The field effect transistor as set forth in claim 13, wherein said shielding electrode is connected to said source electrode to be grounded therethrough.
Claim 17
Dependent Claim
24 words
The field effect transistor as set forth in claim 13, wherein said shielding electrode is electrically and directly connected to said substrate for grounding.
Claim 18
Dependent Claim
110 words
A field effect transistor comprising: a semiconductor substrate an elongated gate electrode a source electrode arranged at a first side with respect to said gate electrode a drain electrode arranged at a second side opposite to said first side with respect to said gate electrode means for prodiving a plurality of feeding points for said gate electrode, through which gating potential is supplied, said means connecting at least one first feeding points connected to a first potential source in a space generally shielded from said gate electrode by said source electrode, and at least one second feeding point connected to a second potential source lying outside of said shielded space.
Claim 19
Dependent Claim
110 words
A field effect transistor comprising: a semiconductor substrate an elongated gate electrode a source electrode arranged at a first side with respect to said gate electrode a drain electrode arranged at a second side opposite to said first side with respect to said gate electrode means for prodiving a plurality of feeding points for said gate electrode, through which gating potential is supplied, said means connecting at least one first feeding points connected to a first potential source in a space generally shielded from said gate electrode by said source electrode, and at least one second feeding point connected to a second potential source lying outside of said shielded space.
Claim 20
Dependent Claim
20 words
The field effect transistor as set forth in claim 16, wherein said second potential source lies at said second side.
Claim 21
Dependent Claim
27 words
The field effect transistor as set forth in claim 16, which further comprises a shielding means adapted to shield said second potential source from said gate electrode.
Claim 22
Dependent Claim
24 words
The field effect transistor as set forth in claim 18, wherein said shielding means is connected to said source electrode to be grounded therethrough.
Claim 23
Dependent Claim
22 words
The field effect transistor as set forth in claim 18, wherein said shielding means is adapted to be grounded thrrough said substrate.
References Cited (Backward Citations)
No citation records indexed.
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