Patent DK87803C successfully refreshed from Google Patents.
Patent EP0164604A2 successfully refreshed from Google Patents.
EP0164604A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Integrated light emitting/receiving amplifier element
Assignee: NEC Corp
•
Filing: 1985-05-15
•
Granted: —
•
Expires: 2005-05-15
Abstract
Abstract The integrated light emitting/receiving amplifier element comprises a phototransistor (3) over a semiconductor layer (107) at the top of a semiconductor laser (2) of a multilayered structure (101 to 107) formed over a semiconductor substrate (100). This integrated light emitting/receiving amplifier element permits ready crystalline growth and requires only a simple manufacturing process.
Inventors
- 👤 Tomoji Terakado
- 👤 Yuichi Odagiri
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 16:36
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0262; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; H01S5/2277; H03; H03K; H03K17/00; H03K17/94; H03K17/941; H10; H10F; H10F55/00; H10F55/10; H10F55/15; H10F55/155; H01S5/0261; H01S5/0264
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
80 words
An integrated light emitting/receiving amplifier element characterized in that a phototransistor (3) is arranged on a semiconductor layer (107) at the top of a semiconductor laser (2) of a multilayered structure (101 to 107) formed over a semiconductor substrate (100) of a first conductivity type, the phototransistor (3) generating a multiplied photocurrent in response to incident light and the photocurrent being injected into the semiconductor laser (2) with the result that amplified light is emitted by the light emitting/receiving element.
Claim 2
Dependent Claim
80 words
An integrated light emitting/receiving amplifier element characterized in that a phototransistor (3) is arranged on a semiconductor layer (107) at the top of a semiconductor laser (2) of a multilayered structure (101 to 107) formed over a semiconductor substrate (100) of a first conductivity type, the phototransistor (3) generating a multiplied photocurrent in response to incident light and the photocurrent being injected into the semiconductor laser (2) with the result that amplified light is emitted by the light emitting/receiving element.
Claim 3
Dependent Claim
127 words
An integrated light emitting/receiving element according to claim 1 characterized in that a) the semiconductor laser (2) comprises a first semiconductor layer of the first conductivity type,.a second semiconductor layer emitting light upon injection of an electric current, and a third semiconductor layer of a second conductivity type reverse to the first conductivity type; b) the phototransistor (3) comprises a collector layer (108) of the second conductivity type, a base layer (109) of the first conductivity type and an emitter layer(110)of the second conductivity type, successively formed over the semiconductor laser (2); c) a first electrode (113)formed over the bottom of the semiconductor substrate (100); and d) a second electrode (112) formed over the emitter (110) leaving an opening (111) for light incident on the phototransistor (3).
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.