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EP0161981A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Integrated circuits with several aluminium alloy interconnection levels and method of manufacture

Assignee: Pour L'etude Et La Fabrication De Circuits Integres Speciaux - Efcis Ste
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Filing: 1985-04-29
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Granted: —
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Expires: 2005-04-29
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Abstract

Abstract Translated from French L'invention concerne les circuits intégrés à plusieurs niveaux d'interconnexion. The invention relates to integrated circuits with several interconnection levels. Le premier niveau (16) est un alliage ternaire d'aluminium, le second (24) est un autre alliage d'aluminium, et ils sont séparés par du tantale (22) dans les zones de contact entre les deux niveaux. En pratique, tout le deuxième niveau est constitué par la superposition d'une couche mince de tantale (22) et d'un alliage d'aluminium/silicium (24). The first level (16) is a ternary aluminum alloy, the second (24) is another aluminum alloy, and they are separated by tantalum (22) in the contact areas between the two levels. In practice, the entire second level consists of the superposition of a thin layer of tantalum (22) and an aluminum / silicon alloy (24). On évite les problèmes de surgravure du premier niveau pendant la gravure du second niveau. The problems of overprinting of the first level are avoided during the engraving of the second level.

Inventors

  • 👤 Michel Marty
  • 👤 Annie Baudrant
  • 👤 Alain Passerat

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 12:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/01; H10W20/031

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