Patent EP0161740A2 successfully refreshed from Google Patents.
EP0161740A2
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EP
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Method of manufacturing semiconductor substrate
Assignee: Toshiba Corp
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Filing: 1985-02-13
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Granted: —
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Expires: 2005-02-13
Abstract
Abstract A method of manufacturing a semiconductor substrate having a modified layer therein comprises the steps of mirror-polishing one surface of each of first and second semiconductor plates (21,23), forming a modified layer (22) on at least one of the polished surfaces of the first and second semiconductor plates (21, 23), and bonding the polished surfaces of the first and second semiconductor plates (21, 23) with each other in a clean atmosphere.
Inventors
- 👤 Masaru C/O Patent Division Shimbo
- 👤 Kiyoshi C/O Patent Division Fukuda
- 👤 Yoshiaki C/O Patent Division Ohwada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 02:52
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P10/00; H10P10/12; H10P10/128; H10P52/00; H10W; H10W10/00; H10W10/10; H10W10/181; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/159
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
72 words
A method of manufacturing a semiconductor substrate having a modified layer therein, comprising the steps of: mirror-polishing one surface of each of first and second semiconductor plates (21, 23); forming a modified layer (22) on at least one of the polished surfaces of said first and second semiconductor plates (21, 23); and bonding the polished surfaces of said first and second semiconductor plates (21, 23) with each other in a clean atmosphere.
Claim 2
Independent Claim
72 words
A method of manufacturing a semiconductor substrate having a modified layer therein, comprising the steps of: mirror-polishing one surface of each of first and second semiconductor plates (21, 23); forming a modified layer (22) on at least one of the polished surfaces of said first and second semiconductor plates (21, 23); and bonding the polished surfaces of said first and second semiconductor plates (21, 23) with each other in a clean atmosphere.
Claim 3
Dependent Claim
18 words
A method according to claim 1, characterized in that the step of mirror-polishing is performed by optical polishing.
Claim 4
Dependent Claim
21 words
A method according to claim 1, characterized in that a roughness of the polished surface is not more than 500 A.
Claim 5
Dependent Claim
37 words
A method according to claim 1, characterized in that the polished surface is washed before bonding with at least one member selected from the group consisting of water, a surfactant, an organic solvent and an acid solution.
Claim 6
Dependent Claim
21 words
A method according to claim 1, characterized in that said modified layer is an impurity layer (22) formed by impurity diffusion.
Claim 7
Dependent Claim
20 words
A method according to claim 1, characterized in that said modified layer is an oxide layer formed by thermal oxidation.
Claim 8
Dependent Claim
31 words
A method according to claim 1, characterized in that the clean atmosphere is an atmosphere which contains a foreign substance in an amount of not more than 20 particles/m 3 .
Claim 9
Dependent Claim
34 words
A method according to claim 1, characterized by further comprising the step of heating a bonded structure of said first and second semiconductor plates (21, 23) to a temperature of not lower than 200°C.
Claim 10
Independent Claim
114 words
A method of manufacturing a semiconductor substrate having a modified layer therein, comprising the steps of: mirror-polishing one surface of each of first and second semiconductor plates.(31, 41); forming at least one groove (32) in at least one of the polished surfaces of said first and second semiconductor plates (31, 41), the groove (32) opening to end faces of the semiconductor plate (31); bonding the polished surfaces of said first and second semiconductor plates (31, 41) in a clean atmosphere so as to obtain a bonded structure; and placing said bonded structure in an atmosphere containing a semiconductor modifying gas so as to form a modified layer (62) in and around said groove (42).
Claim 11
Independent Claim
114 words
A method of manufacturing a semiconductor substrate having a modified layer therein, comprising the steps of: mirror-polishing one surface of each of first and second semiconductor plates.(31, 41); forming at least one groove (32) in at least one of the polished surfaces of said first and second semiconductor plates (31, 41), the groove (32) opening to end faces of the semiconductor plate (31); bonding the polished surfaces of said first and second semiconductor plates (31, 41) in a clean atmosphere so as to obtain a bonded structure; and placing said bonded structure in an atmosphere containing a semiconductor modifying gas so as to form a modified layer (62) in and around said groove (42).
Claim 12
Dependent Claim
18 words
A method according to claim 9, characterized in that the step of mirror-polishing is performed by optical polishing.
Claim 13
Dependent Claim
21 words
A method according to claim 9, characterized in that a roughness of the polished surface is not more than 500 A.
Claim 14
Dependent Claim
37 words
A method according to claim 9, characterized in that the polished surface is washed before bonding with at least one member selected from the group consisting of water, a surfactant, an organic solvent and an acid solution.
Claim 15
Dependent Claim
25 words
A method according to claim 9, characterized in that the semiconductor modifying gas is an impurity gas, and said modified layer is an impurity layer.
Claim 16
Dependent Claim
25 words
A method according to claim 9, characterized in that the semiconductor modifying gas is oxygen gas, and said modified layer is an oxide layer (62).
Claim 17
Dependent Claim
31 words
A method according to claim 9, characterized in that the clean atmosphere is an atmosphere which contains a foreign substance in an amount of not more than 20 particles/m 3 .
References Cited (Backward Citations)
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