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EP0159928A2
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Semiconductor integrated circuit device having fuse-type information storing circuit
Assignee: Fujitsu Ltd
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Filing: 1985-03-22
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Granted: —
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Expires: 2005-03-22
Abstract
Abstract A semiconductor integrated circuit device connected between first and second voltage feet lines includes an information storing circuit (3) having a fuse (F) for storing information by blowing or not blowing the fuse, a voltage level conversion circuit (10) outputting a voltage (V'cc) lower than a voltage (Vcc) between the first and second voltage feed lines to the information storing circuit, and a circuit (5) connected between the first and second voltage feed lines, for outputting a detection signal (S) in response to a voltage value at the fuse which is varied with the blown or unblown state of the fuse. The output voltage (V'cc) from the voltage level conversion circuit (10) is set as low as possible to restrain electromigration caused atthe vicinity of the blown portion of the fuse, but higher than the threshold voltage of the information detection circuit (5). Said output voltage (V'cc) is at a predetermined value when the voltage between the first and second voltage feed lines is within a predetermined range, and increases in response to the increment of the voltage between the first and second voltage feed lines when said last mentioned voltage exceeds a predetermined range.
Inventors
- 👤 Yoshihiro Takemae
- 👤 Tomio Nakano
- 👤 Takeo Esuperansa Dai-3 Tatematsu
- 👤 Norihisa Tsuge
- 👤 Junji Ogawa
- 👤 Takashi Horii
- 👤 Yasuhiro Fujii
- 👤 Masao Nakano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 20:01
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/78; G11C29/785; G11C17/00; G11C17/14; G11C17/16; G11C5/00; G11C5/14; G11C5/147; G11C8/00; G11C8/10; H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
126 words
A semiconductor integrated circuit device connected between first and second voltage feed means comprising: information storing means including a fuse for storing information by blowing or not blowing said fuse; a voltage level conversion means connected to at least one of the first and second voltage feed means and outputting a voltage lower than a voltage between the first and second voltage feed means to said information storing means; and means connected between the first and second voltage feed means, for outputting a detection signal in response to a voltage value at the fuse in the information storing means to which the voltage in applied from the voltage level conversion means and which voltage value is varied with the blown or unblown state of the fuse.
Claim 2
Dependent Claim
126 words
A semiconductor integrated circuit device connected between first and second voltage feed means comprising: information storing means including a fuse for storing information by blowing or not blowing said fuse; a voltage level conversion means connected to at least one of the first and second voltage feed means and outputting a voltage lower than a voltage between the first and second voltage feed means to said information storing means; and means connected between the first and second voltage feed means, for outputting a detection signal in response to a voltage value at the fuse in the information storing means to which the voltage in applied from the voltage level conversion means and which voltage value is varied with the blown or unblown state of the fuse.
Claim 3
Dependent Claim
28 words
A semiconductor integrated circuit device according to claim 1, wherein said voltage level conversion means includes a voltage divider connected between the first and second voltage feed means.
Claim 4
Dependent Claim
51 words
A semiconductor integrated circuit device according to claim 2, wherein said voltage divider in the voltage level conversion means includes at least one depletion-type transistor as a current limiting resistor and at least one enhancement-type transistor as a resistor, the resistance of said depletion-type and enhancement-type transistor defining the output voltage.
Claim 5
Dependent Claim
40 words
A semiconductor integrated circuit device according to claim 1, wherein the voltage output from said voltage level conversion means is maintained at a predetermined value when the voltage between the first and second voltage feed means exceeds a predetermined value.
Claim 6
Dependent Claim
66 words
A semiconductor integrated circuit device according to claim 4, wherein said voltage level conversion means includes a current limiting element connected between the first and second voltage feed means, a current control element, and a resistor element series-connected to said current control element, the current control element being controlled by an output at the current limiting element to control a current passing through the resistor element.
Claim 7
Dependent Claim
34 words
A semiconductor integrated circuit device according to claim 4, wherein the voltage output from the voltage level conversion means is kept at a predetermined value regardless if the fuse is blown or not blown.
Claim 8
Dependent Claim
60 words
A semiconductor integrated circuit device according to claim 1, wherein, in a normal operation, the voltage output from said voltage level conversion means is set as low as possible to restrain migration caused at the vicinity of the blown portion of the fuse to which the voltage is applied and higher than the threshold voltage of said information detection means.
Claim 9
Dependent Claim
72 words
A semiconductor integrated circuit device according to claim 7, wherein said voltage level conversion means includes a voltage divider connected between the first and second voltage feed means and having a current limiting element, a current control element, and a resistor element series-connected to said current control element, the current control element being driven by an output voltage at the current limiting element to control a current passing through the resistor element.
Claim 10
Dependent Claim
76 words
A semiconductor integrated circuit device according to claim 1, wherein said voltage output from said voltage level conversion means is maintained at a predetermined value when the voltage between the first and second voltage feed means is within a predetermined range, and wherein said voltage output from said voltage level conversion means increases in response to the increment of the voltage between the first and second voltage feed means when said voltage exceeds said predetermined range.
Claim 11
Dependent Claim
162 words
A semiconductor integrated circuit device according to claim 9, wherein the voltage level conversion means includes a first voltage divider connected between the first and second voltage feed means and having a first current limiting element, a first current control element, a second current control element parallel-connected to said first current control element, a resistor element series-connected to said first and second current control elements, and a second voltage divider connected between the first and second voltage feed means, having a second current limiting element, and wherein the first current control element is driven by an output voltage at the first current limiting element, prior to the driving of the second current control element, and the second current control element is driven by an input voltage at the second current limiting element after the current passing through the first current control element is saturated, the sum of currents passing through the first and second current control elements flowing to the resistor element.
Claim 12
Dependent Claim
38 words
A semiconductor integrated circuit device according to claim 1, further comprising a terminal means connected to one end of said fuse in said information storing means for enabling external application of a voltage sufficient to blow the fuse.
Claim 13
Dependent Claim
31 words
A semiconductor integrated circuit device according to claim 1, wherein said information detecting means is an inverter circuit having a predetermined threshold level lower than the voltage at the blown fuse.
Claim 14
Dependent Claim
23 words
A semiconductor integrated circuit device according to claim 1, wherein said information storing means is a non-latched type circuit including a fuse element.
Claim 15
Dependent Claim
22 words
A semiconductor integrated circuit device according to claim 1, wherein said information storing means is a latch-type circuit including a fuse element.
Claim 16
Dependent Claim
31 words
A semiconductor integrated circuit device according to claim 1, wherein said fuse is formed in a cavity defined by insulating layers and having two ends each connected to a conductive member.
References Cited (Backward Citations)
No citation records indexed.
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