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Exhaust gas sensor and process for producing same

Assignee: Figaro Engineering Inc
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Filing: 1985-03-25
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Granted: —
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Expires: 2005-03-25
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Abstract

Abstract An exhaust gas sensor comprising a compound ASnO<sub>3-δ</sub> wherein A is Ba, Ra, Sr or Ca to make use of the variation of resistance value of the compound. BaSnO<sub>3-δ</sub> and RaSnO<sub>3-δ</sub> are n-type semiconductors, while SrSnO<sub>3-δ</sub> and CaSnO<sub>3-δ</sub> exhibit the behavior of n-type semiconductors at the point of equivalence and the behavior of p-type semiconductors in the lean burn region. The compound AWnO<sub>3-δ</sub> is prepared by reacting an alkaline earth carbonate with Sn0<sub>2</sub>.

Inventors

  • 👤 Kazuko Sasaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 21:25
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/02; G01N27/04; G01N27/12; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 74 words
An exhaust gas sensor including a gas sensitive member comprising a metallic oxide semiconductor capable of undergoing variations in resistance, and at least one pair of electrodes connected to the gas sensitive member, the exhaust gas sensor being characterized in that the metallic oxide semiconductor is a compound ASnO 3-δ wherein A is at least one element selected from the group consisting of Ba, Sr, Ca and Ra, and 6 is a non-stoichiometric parameter.
Claim 2
Dependent Claim 74 words
An exhaust gas sensor including a gas sensitive member comprising a metallic oxide semiconductor capable of undergoing variations in resistance, and at least one pair of electrodes connected to the gas sensitive member, the exhaust gas sensor being characterized in that the metallic oxide semiconductor is a compound ASnO 3-δ wherein A is at least one element selected from the group consisting of Ba, Sr, Ca and Ra, and 6 is a non-stoichiometric parameter.
Claim 3
Dependent Claim 15 words
An exhaust gas sensor as defined in claim 1 wherein the element A is Ba.
Claim 4
Dependent Claim 22 words
An exhaust gas sensor as defined in claim 1 wherein the compound ASnO 3-δ is 0.04 to 20 in mean crystallite size.
Claim 5
Dependent Claim 29 words
An exhaust gas sensor as defined in claim 3 wherein the element A is Ba, and the compound BaSnO 3-δ is 0.3 to 20 µ in mean crystallite size.
Claim 6
Dependent Claim 23 words
An exhaust gas sensor as defined in claim 4 wherein the compound BaSnO 3-δ is 0.5 to 20 µ in mean crystallite size.
Claim 7
Dependent Claim 33 words
An exhaust gas sensor as defined in claim 5 wherein the compound BaSnO 3-δ is 1.5 to 0.04 m 2 /g in specific surface area and 0.5 to 20 in mean crystallite size.
Claim 8
Dependent Claim 54 words
An exhaust gas sensor as defined in claim 1 wherein the gas sensitive member is supported by an alumina substrate, and an intermediate layer made of a heat-resistant insulating material is provided between the alumina substrate and the gas sensitive member, the heat-resistant insulating material being not reactive with the compound ASnO 3-δ .
Claim 9
Dependent Claim 51 words
An exhaust gas sensor as defined in claim 7 wherein the intermediate layer is made of at least one member selected from the group consisting of spinel (MgAl 2 O 4 ), mullite (Al 6 Si 2 O 13 ) and cordierite (Mg 2 Al 4 Si 5 O 18 ).
Claim 10
Dependent Claim 98 words
A process for producing an exhaust gas sensor comprising a gas sensitive member and at least one pair of electrodes connected to the sensitive member, the process being characterized in that at least one substance selected from the group consisting of compounds ASnO 3-δ (wherein A is at least one element selected from the group consisting of Ba, Sr, Ca and Ra, and 6 is a non-stoichiometric parameter) and a substance which is converted to a compound ASnO 3-δ by heating is baked in a non-reducing atmosphere at 1000 to 2000° C to prepare the gas sensitive member.
Claim 11
Dependent Claim 98 words
A process for producing an exhaust gas sensor comprising a gas sensitive member and at least one pair of electrodes connected to the sensitive member, the process being characterized in that at least one substance selected from the group consisting of compounds ASnO 3-δ (wherein A is at least one element selected from the group consisting of Ba, Sr, Ca and Ra, and 6 is a non-stoichiometric parameter) and a substance which is converted to a compound ASnO 3-δ by heating is baked in a non-reducing atmosphere at 1000 to 2000° C to prepare the gas sensitive member.
Claim 12
Dependent Claim 16 words
A process as defined in claim 9 wherein the baking temperature is 1260 to 1800° C.
Claim 13
Dependent Claim 14 words
ll. A process as defined in claim 10 wherein the element A is Ba.
Claim 14
Dependent Claim 17 words
a process as defined in claim 9 wherein the baking time is 30 minutes to 20 hours.
Claim 15
Dependent Claim 16 words
A process as defined in claim 10 wherein the baking time is 1 to 10 hours.

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