Patent US5459781A successfully refreshed from Google Patents.
Patent EP0156069A2 successfully refreshed from Google Patents.
EP0156069A2
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EP
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Diamond-like thin film and method for making the same
Assignee: Meidensha Corp
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Filing: 1984-11-23
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Granted: —
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Expires: 2004-11-23
Abstract
Abstract A diamond-like thin film is obtainable by a sputtering process involving applying electric power under a limited hydrogen pressure within a sputtering apparatus (1) having a graphite target (2), thereby forming, on a substrate (5), a diamond-like thin film comprising an accumulation of particles having a size from several nm to several 100 nm, said particles having its surface enclosed with alkyl radicals having up to 3 carbon number and an interior with a diamond-like structure with a four coordinated carbon arrangement.
Inventors
- 👤 Akio Hiraki
- 👤 Tatsuro Miyasato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 15:08
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0057; C23C14/06; C23C14/0605
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
61 words
A thin film characterized in that said film is formed by means of graphite target sputtering and comprises an accumulation of particles having a size between 5 and 400 nm, said particles having a diamond structure with carbon-carbon linkages in a four coordinated arrangement, and having alkyl radicals with up to 3 carbon atoms bonded on the surfaces of said particles.
Claim 2
Dependent Claim
61 words
A thin film characterized in that said film is formed by means of graphite target sputtering and comprises an accumulation of particles having a size between 5 and 400 nm, said particles having a diamond structure with carbon-carbon linkages in a four coordinated arrangement, and having alkyl radicals with up to 3 carbon atoms bonded on the surfaces of said particles.
Claim 3
Independent Claim
91 words
A method of making a thin film characterized by the steps of applying electric power at a hydrogen pressure of 0.1333 to 666.5 Pa (10-3 to 5 Torr) within a sputtering apparatus having a graphite target to cause sputtering, and forming on a substrate a thin film comprising an accumulation of particles having a size between 5 and 400 nm, said particles having a diamond structure with carbon-carbon linkages in a four coordinated arrangement, and having alkyl radicals with up to 3 carbon atoms bonded on the surfaces of said particles.
Claim 4
Independent Claim
91 words
A method of making a thin film characterized by the steps of applying electric power at a hydrogen pressure of 0.1333 to 666.5 Pa (10-3 to 5 Torr) within a sputtering apparatus having a graphite target to cause sputtering, and forming on a substrate a thin film comprising an accumulation of particles having a size between 5 and 400 nm, said particles having a diamond structure with carbon-carbon linkages in a four coordinated arrangement, and having alkyl radicals with up to 3 carbon atoms bonded on the surfaces of said particles.
Claim 5
Dependent Claim
20 words
A method according to Claim 2, characterized in that said electric power is generated by a high frequency power source.
Claim 6
Dependent Claim
19 words
A method according to Claim 2, characterized in that said electric power is generated by a dc power source.
Claim 7
Independent Claim
32 words
A method according to any of Claims 2 to 4 characterized in that a small amount of nitrogen is added to the hydrogen gas to produce a p-type semiconductor diamond thin film.
Claim 8
Independent Claim
17 words
A method according to any of Claims 2 to 4 characterized in that said hydrogen includes argon.
Claim 9
Dependent Claim
20 words
A method according to Claim 6 characterized in that the volume ratio of said hydrogen to said argon is 1:1.
Claim 10
Independent Claim
24 words
A method according to any of Claims 2 to 7, characterized in that said substrate is maintained at a temperature of less than 100°C.
Claim 11
Independent Claim
34 words
A method according to any of Claims 2 to 8, characterized in that a mesh screen is provided between said graphite target and said substrate, a bias voltage being supplied to said mesh screen.
References Cited (Backward Citations)
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